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BTS 410 F2
Semiconductor Group
7
2003-Oct-01
Status output
ST
GND
ESD-
ZD
+5V
R
ST(ON)
ESD-Zener diode: 6 V typ., max 5 mA;
R
ST(ON)
< 250
at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
Short circuit detection
Fault Condition:
V
ON
> 8.5 V typ.; IN high
Short circuit
detection
Logic
unit
+ Vbb
OUT
VON
Inductive and overvoltage output clamp
+ Vbb
OUT
GND
PROFET
VZ
V
ON
V
ON
clamped to 68 V typ.
Overvolt. and reverse batt. protection
+ Vbb
IN
ST
ST
R
IN
R
GND
GND
R
Signal GND
Logic
PROFET
VZ2
VZ1
V
Z1
= 6.2 V typ.,
V
Z2
= 70 V typ.,
R
GND
= 150
, R
IN
,
R
ST
= 15 k
Open-load detection
ON-state diagnostic condition:
V
ON
<
R
ON
*
I
L(OL)
; IN
high
Open load
detection
Logic
unit
+ Vbb
OUT
ON
V
ON
GND disconnect
PROFET
V
IN
ST
OUT
GND
bb
Vbb
1
2
4
3
5
VINVST
VGND
Any kind of load. In case of Input=high is
V
OUT
≈
V
IN
-
V
IN(T+)
.
Due to V
GND
>0, no V
ST
= low signal available.
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| Q67060-S6108-A2 | High Speed CMOS Logic Dual 4-Input NOR Gates 14-SOIC -55 to 125 |
| Q67060-S6108-A3 | High Speed CMOS Logic Dual 4-Input NOR Gates 14-SOIC -55 to 125 |
| Q67060-S6108-A4 | High Speed CMOS Logic Dual 4-Input NOR Gates 14-SOIC -55 to 125 |
| Q67060-S6109-A2 | High Speed CMOS Logic Dual 4-Input NOR Gates 14-SOIC -55 to 125 |
| Q67060-S6109-A3 | High Speed CMOS Logic Dual 4-Input NOR Gates 14-SOIC -55 to 125 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q67060-S6108-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6108-A3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6108-A4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6109-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6109-A3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
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