參數(shù)資料
型號(hào): Q62702-S501
廠商: SIEMENS AG
英文描述: NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)
中文描述: NPN硅開(kāi)關(guān)晶體管(高直流電流增益低集電極發(fā)射極飽和電壓)
文件頁(yè)數(shù): 3/11頁(yè)
文件大?。?/td> 101K
代理商: Q62702-S501
BGC420
High Frequency Products
3
Edition A13, 05/99
Power Gain
versus Frequency
Vcc=3V, Icc=5mA
Gma
Gms
S21
2
dB
f
GHz
Icc
mA
Gma
Gms
dB
Power Gain
versus Device Current
Vcc=3V
S21
2
S21
2
versus Frequency and Temperature
Vcc=3V, Icc=7mA
f
GHz
dB
=
-40°C
= +27
°C
= +85
°C
28
26
24
22
20
18
16
14
12
10
0.2 0.6 1 1.4 1.8 2.2 2.6 3
Gms
Gma
IS21I
2
50
45
40
35
30
25
20
15
10
5
0
0.1
1
10
f=1 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
相關(guān)PDF資料
PDF描述
Q62702-S502 SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level)
Q62702-S503 NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)
Q62702-S512 SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
Q62702-S517 SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
Q62702-S519 SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
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