<big id="bq6h0"><sup id="bq6h0"></sup></big>
    <ins id="bq6h0"><label id="bq6h0"></label></ins>
    <input id="bq6h0"><span id="bq6h0"><tr id="bq6h0"></tr></span></input><pre id="bq6h0"><menu id="bq6h0"></menu></pre>
    參數(shù)資料
    型號(hào): Q62702-P3054
    廠商: SIEMENS AG
    英文描述: 1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power
    中文描述: 1300 nm激光的同軸封裝與釤尾纖,低功耗
    文件頁(yè)數(shù): 2/11頁(yè)
    文件大?。?/td> 101K
    代理商: Q62702-P3054
    BGC420
    High Frequency Products
    2
    Edition A13, 05/99
    Maximum Ratings
    Parameter
    Device current
    Device voltage
    Total power dissipation, T
    s
    110°C
    1)
    Control voltage
    Input Current for pin 1
    Symbol
    I
    CC
    Vcc
    P
    tot
    Vc
    Ir
    Unit
    mA
    V
    mW
    V
    μ
    A
    15
    4.5
    68
    Vcc+0.5
    380
    Junction temperature
    Ambient temperature range
    Storage temperature range
    T
    j
    T
    A
    T
    stg
    150
    °
    C
    °
    C
    °
    C
    -65...+150
    -65...+150
    Thermal Resistance
    Junction-soldering point
    1)
    1)TS is measured on the Ground lead at the soldering point to the pcb
    .
    R
    th JS
    270
    K/W
    Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
    with Rx=82
    W
    ),
    Tc=25°C, Vcc=3V, I
    CC
    7mA unless noted
    Symbol
    Gp
    Parameter
    Power Gain (
    S
    21
    2
    )
    Unit
    dB
    Min
    17.5
    14.5
    Typ
    19
    16
    1.3
    1.5
    1
    1
    15
    15
    7
    9
    4
    7
    3.7
    2.5
    <10
    35
    -60
    Max
    f=900MHz
    f=1.8GHz
    f=900MHz
    f=1.8GHz
    NF
    Noise Figure (in 50
    W
    System)
    dB
    1.5
    1.7
    P
    -1dB
    Output Power at 1dB Gain Compression f=900MHz
    (in 50
    W
    System)
    Third Order Intercept Point
    (Output,
    G
    Opt
    )
    Input Return Loss
    f=1.8GHz
    f=900MHz
    f=1.8GHz
    f=900MHz
    f=1.8GHz
    f=900MHz
    f=1.8GHz
    dBm
    IP
    3
    dBm
    RL
    in
    dB
    RL
    out
    Output Return Loss
    dB
    t
    on
    t
    off
    I
    leak
    I
    VcOn
    I
    VcOff
    V
    cmin
    V
    cmax
    2)
    A positive sign denotes a current flowing form the Pin into the external circuit.
    On Switching Time
    3)
    Off Switching Time
    3)
    Leakage Current In Sleep Mode
    Controll Pin (Vc) Current in Active Mode
    2)
    Controll Pin (Vc) Current in Sleep Mode
    2)
    Minimum Voltage at Vc for Sleep Mode
    Maximum Voltage at Vc for Active Mode
    μs
    μs
    μA
    μA
    nA
    V
    V
    V
    cc
    - 0.3V
    0V+0.3V
    3)
    This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
    相關(guān)PDF資料
    PDF描述
    Q62702-P3055 1300 nm Laser in Coaxial Package with SM-Pigtail, Low Power
    Q62702-P54 Silizium-Fotodiode mit erhohter Blauempfindlichkeit Silicon Photodiode with Enhanced Blue Sensitive
    Q62702-P55 Silizium-Fotodiode mit sehr kleinem Dunkelstrom Silicon Photodiode with Very Low Dark Current
    Q62702-P73 Silicon PIN Photodiode
    Q62702-P75 NPN-Silizium-Fototransistor Silicon NPN Phototransistor
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    Q62702P3558 制造商:OSRAM 功能描述:LASER DIODE QW-LD 860NM 3PIN - Bulk
    Q62702P3577 制造商:OSRAM 功能描述:PHOTOTRANSISTOR CHIP SILICON NPN TRANSISTOR 850NM 3PIN TO-18 - Bulk
    Q62702P3578 制造商:OSRAM 功能描述:PHOTOTRANSISTOR CHIP SILICON NPN TRANSISTOR 880NM 3PIN TO-18 - Bulk 制造商:OSRAM 功能描述:PHOTOTRANSISTOR NPN 880NM TO-18
    Q62702P3581 功能描述:光電晶體管 RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
    Q62702P3582 制造商:OSRAM 功能描述:Phototransistor Chip Silicon 880nm 3-Pin TO-18 制造商:OSRAM 功能描述:PHOTOTRANSISTOR CHIP SILICON NPN TRANSISTOR 880NM 3PIN TO-18 - Bulk 制造商:OSRAM 功能描述:PHOTOTRANSISTOR NPN 880NM TO-18