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參數(shù)資料
| 型號： | Q62702-P17-S1 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silizium-Differential-Fotodiode Silicon Differential Photodiode |
| 中文描述： | Silizium -微分差分Fotodiode硅光電二極管 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 245K |
| 代理商： | Q62702-P17-S1 |
BPX 48
BPX 48 F
Semiconductor Group
350
Abmessung der bestrahlungsempfindlichen
Flche
Dimensions of radiant sensitive area
L
×
B
L
×
W
H
0.7
×
2.2
0.7
×
2.2
mm
Abstand Chipoberflche zu Gehuseober-
flche
Distance chip front to case surface
0.5
0.5
mm
Halbwinkel
Half angle
Dunkelstrom,
V
R
= 10 V
Dark current
±
60
±
60
Grad
deg.
I
R
10 (
≤
100)
10 (
≤
100)
nA
Spektrale Fotoempfindlichkeit
Spectral sensitivity
λ
= 850 nm
λ
= 950 nm
Max. Abweichung der Fotoempfindlichkeit
der Systeme vom Mittelwert
Max. deviation of the system spectral
sensitivity from the average
S
λ
S
λ
S
0.55
–
±
5
–
0.65
±
5
A/W
%
Quantenausbeute
Quantum yield
λ
= 850 nm
λ
= 950 nm
Leerlaufspannung
Open-circuit voltage
E
v
= 1000 Ix, Normlicht/standard light A,
T
= 2856 K
E
e
= 0.5 mW/cm
2
,
λ
= 950 nm
Kurzschlustrom
Short-circuit current
E
v
= 1000 Ix, Normlicht/standard light A,
T
= 2856 K
E
e
= 0.5 mW/cm
2
, l = 950 nm
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
L
= 1 k
;
V
R
= 5 V;
λ
= 850 nm;
I
p
= 20
μ
A
Durchlaspannung,
I
F
= 40 mA,
E
= 0
Forward voltage
η
0.8
–
–
0.95
Electrons
Photon
V
O
V
O
330 (
≥
280)
–
–
300 (
≥
280)
mV
mV
I
SC
I
SC
t
r
,
t
f
24
–
–
7
μ
A
μ
A
ns
500
500
V
F
1.3
1.3
V
Kennwerte
(
T
A
= 25
°
C) für jede Einzeldiode
Characteristics
(
T
A
= 25
°
C) per single diode system
Bezeichnung
Description
Symbol
Symbol
Wert
Value
Einheit
Unit
BPX 48
BPX 48 F
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