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參數(shù)資料
| 型號： | Q62702-F655 |
| 廠商： | SIEMENS AG |
| 英文描述： | LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz |
| 中文描述： | 低噪聲NPN硅MICROVAVE晶體管高達2 GHz |
| 文件頁數(shù)： | 6/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-F655 |
BGC420
High Frequency Products
6
Edition A13, 05/99
Layout Proposal
Part List for Vcc=3V, I
CC
￡
7mA
Component
Value
Comment
L1
C2
C3
C4
C5
C6
C7
Rx
Substrate
BGC420
100nH
RFC
1nF
Compensation Capacitor for Low Frequency Stabilization
100pF
RFC
150pF
Blocking Capacitor
100nF
Blocking Capacitor
220pF
Coupling Capacitor
220pF
Coupling Capacitor
82
W
h=0.5mm
Current Adjust
Fr4,
e
r
=4.5
This proposal demonstrates how to use the BGC420 as a Self-Biased Transistor. As for a discrete Transistor
matching circuits have to be applied. A good starting point for various applications are the Application Notes
provided for the BFP420.
LQ
C7
9F
9
%*&
C2
C4
C5
Rx
L1
C3
C6
B
Figure 2. Layout Proposal
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| Q62702-F659 | NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) |
| Q62702-F66 | PNP SILICON PLANAR TRANSISTORS |
| Q62702-F662 | PNP SILICON RF TRANSISTORS |
| Q62702-F663 | PNP SILICON RF TRANSISTORS |
| Q62702-F664 | PNP SILICON RF TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-F659 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) |
| Q62702-F66 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTORS |
| Q62702-F662 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON RF TRANSISTORS |
| Q62702-F663 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON RF TRANSISTORS |
| Q62702-F664 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON RF TRANSISTORS |
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