參數(shù)資料
型號(hào)： Q62702-F1490
廠商： SIEMENS AG
英文描述： COVER LED LIGHT PIPES
中文描述： NPN硅射頻晶體管（對(duì)于低功率放大器的集電極電流為2.5mA，從0.2毫安在移動(dòng)通信系統(tǒng)傳呼）
文件頁(yè)數(shù)： 4/11頁(yè)
文件大?。?/td> 101K
代理商： Q62702-F1490
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
相關(guān)PDF資料
PDF描述
Q62702-Y78-G PNP SILICON PLANAR TRANSISTORS
Q62702-Y78-H Safety Sign; Legend:Notice Positively No Smoking Allowed on These Premises; External Height:10"; External Width:14"; Body Material:Aluminum; Color:Blue/White RoHS Compliant: NA
Q62702-Y78-J Safety Sign; Legend:No Smoking (With Picture); External Height:10"; External Width:14"; Body Material:Aluminum; Color:Red/Black RoHS Compliant: NA
Q62702-Y78-K Safety Sign; Legend:No Smoking This Area; External Height:10"; External Width:14"; Body Material:Aluminum; Color:Red/White RoHS Compliant: NA
Q62702A674 DIODE ZENER 150MW 5.6V 0603
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q62702-F1491 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
Q62702-F1492 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
Q62702-F1493 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA)
Q62702-F1494 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems
Q62702-F1498 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
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