型號: | Q62702-F1372 |
廠商: | SIEMENS AG |
英文描述: | Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
中文描述: | 硅?溝道MOS FET三極管(對于RF階段高達(dá)300 MHz的FM應(yīng)用的最好) |
文件頁數(shù): | 3/11頁 |
文件大小: | 101K |
代理商: | Q62702-F1372 |
相關(guān)PDF資料 |
PDF描述 |
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Q62702-F1377 | NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Q62702-F1378 | NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Q62702-F1382 | NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) |
Q62702-F1391 | GaAs MMIC (Biased Dual Gate GaAs FET) |
Q62702-F1393 | GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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Q62702-F1377 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Q62702-F1378 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Q62702-F1382 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) |
Q62702-F1391 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs MMIC (Biased Dual Gate GaAs FET) |
Q62702-F1393 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) |