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參數(shù)資料
| 型號： | Q62702-F1347 |
| 廠商： | SIEMENS AG |
| 英文描述： | PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents) |
| 中文描述： | 進步黨硅射頻晶體管（低失真的天線和電信系統(tǒng)的高達1.5 GHz的寬帶在集電極電流放大器） |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-F1347 |
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
相關PDF資料 |
PDF描述 |
|---|---|
| Q62702-F135 | NPN Silicon Planar Transistors |
| Q62702-F1359 | NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) |
| Q62702-F137 | PNP SILICON PLANAR TRANSISTORS |
| Q62702-F1372 | Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
| Q62702-F1377 | NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-F135 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon Planar Transistors |
| Q62702-F1359 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) |
| Q62702-F137 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTORS |
| Q62702-F1372 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
| Q62702-F1377 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
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