參數(shù)資料
型號: Q62702-F1346
廠商: SIEMENS AG
英文描述: PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)
中文描述: 進步黨硅射頻晶體管(低失真和電信寬帶天線放大器)
文件頁數(shù): 2/11頁
文件大?。?/td> 101K
代理商: Q62702-F1346
BGC420
High Frequency Products
2
Edition A13, 05/99
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation, T
s
110°C
1)
Control voltage
Input Current for pin 1
Symbol
I
CC
Vcc
P
tot
Vc
Ir
Unit
mA
V
mW
V
μ
A
15
4.5
68
Vcc+0.5
380
Junction temperature
Ambient temperature range
Storage temperature range
T
j
T
A
T
stg
150
°
C
°
C
°
C
-65...+150
-65...+150
Thermal Resistance
Junction-soldering point
1)
1)TS is measured on the Ground lead at the soldering point to the pcb
.
R
th JS
270
K/W
with Rx=82
W
),
Tc=25°C, Vcc=3V, I
CC
7mA unless noted
Symbol
Gp
Parameter
Power Gain (
S
21
2
)
Unit
dB
Min
17.5
14.5
Typ
19
16
1.3
1.5
1
1
15
15
7
9
4
7
3.7
2.5
<10
35
-60
Max
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
NF
Noise Figure (in 50
W
System)
dB
1.5
1.7
P
-1dB
Output Power at 1dB Gain Compression f=900MHz
(in 50
W
System)
Third Order Intercept Point
(Output,
G
Opt
)
Input Return Loss
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
dBm
IP
3
dBm
RL
in
dB
RL
out
Output Return Loss
dB
t
on
t
off
I
leak
I
VcOn
I
VcOff
V
cmin
V
cmax
2)
A positive sign denotes a current flowing form the Pin into the external circuit.
On Switching Time
3)
Off Switching Time
3)
Leakage Current In Sleep Mode
Controll Pin (Vc) Current in Active Mode
2)
Controll Pin (Vc) Current in Sleep Mode
2)
Minimum Voltage at Vc for Sleep Mode
Maximum Voltage at Vc for Active Mode
μs
μs
μA
μA
nA
V
V
V
cc
- 0.3V
0V+0.3V
3)
This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
相關(guān)PDF資料
PDF描述
Q62702-F1347 PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents)
Q62702-F135 NPN Silicon Planar Transistors
Q62702-F1359 NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)
Q62702-F137 PNP SILICON PLANAR TRANSISTORS
Q62702-F1372 Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
Q62702-F1347 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents)
Q62702-F135 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon Planar Transistors
Q62702-F1359 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)
Q62702-F137 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTORS
Q62702-F1372 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)