參數(shù)資料
型號: Q62702-F1271
廠商: SIEMENS AG
英文描述: NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
中文描述: NPN硅射頻晶體管(對于低噪聲,高增益的0.5毫安至12mA的集電極電流寬帶放大器)
文件頁數(shù): 4/11頁
文件大?。?/td> 101K
代理商: Q62702-F1271
BGC420
High Frequency Products
4
Edition A13, 05/99
Icc
mA
Vcc
V
Device Current
versus Rx and Temperature
Vcc=3V
6
5
4
3
2
1
0
7
8
1
2
3
Device Current
versus Voltage at Vc
Vcc=3V; Rx=82
W
mA
Icc
Rx
V
Vc
V
W
R x=56
R x=82
R x=120
R x=68 0
3
12
10
8
6
4
2
0
1
2
4
14
16
R x=33
Device Current
versus Device Voltage
=
-40°C
= +27
°C
= +85
°C
14
6
4
2
0
12
10
8
50
250
450
650
Icc
mA
相關PDF資料
PDF描述
Q62702-F1291 NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Q62702-F1292 NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)
Q62702-F1296 NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)
Q62702-F1298 NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)
Q62702-A1050 Silicon Switching Diode (For high speed switching applications)
相關代理商/技術參數(shù)
參數(shù)描述
Q62702-F1282 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Q62702-F1287 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion)
Q62702-F1291 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Q62702-F1292 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)
Q62702-F1296 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)