| 型號: | Q62702-F1177 | 
| 廠商: | SIEMENS AG | 
| 英文描述: | Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) | 
| 中文描述: | 硅N溝道MOSFET四極管(短通道高S晶體管/ ?品質因數(shù)) | 
| 文件頁數(shù): | 1/11頁 | 
| 文件大小: | 101K | 
| 代理商: | Q62702-F1177 | 

相關PDF資料  | 
PDF描述  | 
|---|---|
| Q62702-F1189 | NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.) | 
| Q62702-F1215 | GaAs FET (N-channel dual-gate GaAs MES FET) | 
| Q62702-F1218 | NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) | 
| Q62702-F1219 | NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers) | 
| Q62702-F1222 | NPN Silicon RF Transistor (For application in TV-sat tuners) | 
相關代理商/技術參數(shù)  | 
參數(shù)描述  | 
|---|---|
| Q62702-F1189 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.) | 
| Q62702-F1215 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:GaAs FET (N-channel dual-gate GaAs MES FET) | 
| Q62702-F1218 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) | 
| Q62702-F1219 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers) | 
| Q62702-F1222 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For application in TV-sat tuners) |