- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄361190 > Q62702-C1832 (SIEMENS AG) NPN Silicon Darlington Transistors (For general AF applications High collector current) PDF資料下載
參數(shù)資料
| 型號(hào)： | Q62702-C1832 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN Silicon Darlington Transistors (For general AF applications High collector current) |
| 中文描述： | NPN硅達(dá)林頓晶體管（一般自動(dòng)對(duì)焦應(yīng)用高集電極電流） |
| 文件頁(yè)數(shù)： | 2/11頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | Q62702-C1832 |
BGC420
High Frequency Products
2
Edition A13, 05/99
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation, T
s
≤
110°C
1)
Control voltage
Input Current for pin 1
Symbol
I
CC
Vcc
P
tot
Vc
Ir
Unit
mA
V
mW
V
μ
A
15
4.5
68
Vcc+0.5
380
Junction temperature
Ambient temperature range
Storage temperature range
T
j
T
A
T
stg
150
°
C
°
C
°
C
-65...+150
-65...+150
Thermal Resistance
Junction-soldering point
1)
1)TS is measured on the Ground lead at the soldering point to the pcb
.
R
th JS
≤
270
K/W
Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
with Rx=82
W
),
Tc=25°C, Vcc=3V, I
CC
￡
7mA unless noted
Symbol
Gp
Parameter
Power Gain (
￥
S
21
￥
2
)
Unit
dB
Min
17.5
14.5
Typ
19
16
1.3
1.5
1
1
15
15
7
9
4
7
3.7
2.5
<10
35
-60
Max
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
NF
Noise Figure (in 50
W
System)
dB
1.5
1.7
P
-1dB
Output Power at 1dB Gain Compression f=900MHz
(in 50
W
System)
Third Order Intercept Point
(Output,
G
Opt
)
Input Return Loss
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
dBm
IP
3
dBm
RL
in
dB
RL
out
Output Return Loss
dB
t
on
t
off
I
leak
I
VcOn
I
VcOff
V
cmin
V
cmax
2)
A positive sign denotes a current flowing form the Pin into the external circuit.
On Switching Time
3)
Off Switching Time
3)
Leakage Current In Sleep Mode
Controll Pin (Vc) Current in Active Mode
2)
Controll Pin (Vc) Current in Sleep Mode
2)
Minimum Voltage at Vc for Sleep Mode
Maximum Voltage at Vc for Active Mode
μs
μs
μA
μA
nA
V
V
V
cc
- 0.3V
0V+0.3V
3)
This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-C311-V2 | ECONOLINE: RSS & RSD - 1kVDC and 3KVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 85%- SMD5, SMD8, SMD10 and SMD12 case styles |
| Q62702-C311-V3 | PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
| Q62702-C311-V4 | PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
| Q62702-C327-V3 | PNP SILICON PLANAR TRANSISTORS |
| Q62702-D1041 | Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-C1847 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:PNP Silicon AF Transistors |
| Q62702-C1850 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
| Q62702-C1851 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
| Q62702-C1852 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:PNP Silicon Darlington Transistors (For general AF applications High collector current) |
| Q62702-C1853 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:NPN Silicon Darlington Transistors (For general AF applications High collector current) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。