| 型號(hào): | Q62702-A1030 |
| 廠(chǎng)商: | SIEMENS AG |
| 英文描述: | Silicon Switching Diode Array (For high speed switching applications Common cathode) |
| 中文描述: | 硅開(kāi)關(guān)二極管陣列(對(duì)于高速開(kāi)關(guān)應(yīng)用普通陰極) |
| 文件頁(yè)數(shù): | 7/11頁(yè) |
| 文件大小: | 101K |
| 代理商: | Q62702-A1030 |

相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-A1031 | Silicon Switching Diode Array (For high speed switching applications Common anode) |
| Q62702-A1036 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1037 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1038 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1039 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-A1031 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon Switching Diode Array (For high speed switching applications Common anode) |
| Q62702-A1036 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1037 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1038 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1039 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |