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參數(shù)資料
| 型號： | Q2008VH4 |
| 英文描述： | Alternistor Triacs |
| 中文描述： | 交變雙向 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 124K |
| 代理商： | Q2008VH4 |
Data Sheets
Quadrac
2002 Teccor Electronics
Thyristor Product Catalog
E3 - 5
http://www.teccor.com
+1 972-580-7777
Figure E3.7 Maximum Allowable Case Temperature versus
On-state Current (4 A)
Figure E3.8 Maximum Allowable Case Temperature versus
On-state Current (6 A to 15 A)
Figure E3.9 Peak Surge Current versus Surge Current Duration
Figure E3.10 Power Dissipation (Typical) versus On-state Current (4 A)
Figure E3.11 Power Dissipation (Typical) versus On-state Current
(6 A to 10 A and 15 A)
Figure E3.12 Normalized diac V
BO
versus Junction Temperature
RMS On-state Current [I
T(RMS)
] – Amps
0
.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
M
C
)
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360
as shown on Dimensional Drawings
130
120
110
100
90
80
70
60
4 A
RMS On-state Current [I
T(RMS)
] – Amps
0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
M
C
)
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360
CASE TEMPERATURE: Measured
as shown on Dimensional Drawings
130
120
110
100
90
80
70
60
0
6 A
10 A
8 A
15 A
200
120
40
1
2
3 4 5 6
8 10
20
3040
60 80 100
200
300
600
1000
80
60
50
8
6
5
4
10
30
20
1
3
2
Surge Current Duration – Full Cycles
P
O
T
)
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT [IT(RMS)]: Maximum
NOTES:
1) Gates control may be lost during
and immediately following surge
current interval.
2) Overload may not be repeated until
junction temperature has returned to
steady state rated value.
15 A
10 A
6 A
4 A
A
D
]
RMS On-state Current [I
T(RMS)
] – Amps
4.0
3.0
2.0
1.0
0
0
1.0
2.0
3.0
4.0
5.0
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360
4 A
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360
18
16
14
12
10
8
6
4
2
0
16
14
12
10
8
6
4
2
0
RMS On-state Current [I
T(RMS)
] – Amps
D
]
15 A
6 A to 10 A
-8
-6
-4
-2
0
+2
+4
-40
-20
0
+20
+40 +60 +80 +100 +120 +140
Junction Temperature (T
J
) – C
P
B
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| Q2008VH4TP | 功能描述:雙向可控硅 200V 8A RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB |
| Q-200E | 制造商:QUALTEK 制造商全稱:QUALTEK 功能描述:HEAT SHRINK THIN WALL TUBING |
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| Q-200E-1 1/2-01-QB48IN-5 | 制造商:Qualtek Electronics Corporation 功能描述:HEATSHRINK 1 1/2"-48" BLACK 制造商:Qualtek Electronics Corporation 功能描述:HEAT SHRINK TUBING |
| Q-200E-1 1/2-01-QB6IN-1 | 制造商:Qualtek Electronics Corporation 功能描述:HEATSHRINK 1 1/2"-6" BLACK 制造商:Qualtek Electronics Corporation 功能描述:HEAT SHRINK TUBING |
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