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參數(shù)資料
| 型號(hào)： | Q-62702-G66 |
| 廠商： | SIEMENS A G |
| 元件分類： | 衰減器 |
| 英文描述： | GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB) |
| 中文描述： | 800 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 94K |
| 代理商： | Q-62702-G66 |
CGY 121 A
Siemens Aktiengesellschaft
1
23.06.98
HL HF PE GaAs1
1998-11-01
GaAs MMIC
Preliminary Datasheet
l
Variable gain amplifier
(MMIC-Amplifier) for mobile communication
l
Typical Gain Control range over 50dB
l
Positive Control Voltage
l
50
input and output matched
l
Low power consumption
l
Operating voltage range: 2.7 to 6 V
l
Frequency range 800 MHz ... 2.5 GHz
ESD:
E
lectro
s
tatic
d
ischarge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(taped)
Package
1)
CGY 121 A
Y9S
Q-62702-G66
MW-6
Maximum ratings
Characteristics
Symbol
max. Value
Unit
Drain voltage
VD
VG
Vcon
8
V
Neg. supply voltage
-8
V
Pos. control voltage
4
V
Channel temperature
TCh
T
stg
P
tot
150
°C
Storage temperature range
Total power dissipation (TS < 81°C) 2)
-55...+150
°C
550
mW
Thermal resistance
Characteristics
Symbol
max. Value
Unit
Channel-soldering point (GND)
R
thChS
125
K/W
1)
Dimensions see page 9.
2)
Please care for sufficient heat dissipation on the pcb!
*)
Pin-out changed compared to CGY120: 180° rotation
6
5
4
3
Vd1
2
1
RF-GND
RF-in; -Vg
RF-GND
Vd2; RF-out
Vcontrol
Semiconductor Group
1
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