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| 型號： | PZ1418B15U |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor(NPN微波功率晶體管) |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-443A, 3 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 81K |
| 代理商： | PZ1418B15U |
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
PZ1418B15U
THERMAL CHARACTERISTICS
Note
1.
See “Mounting recommendations in the General part of handbook SC15”
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C in a common base class B wideband amplifier.
SYMBOL
PARAMETER
CONDITIONS
T
j
= 75
°
C
T
j
= 75
°
C; note 1
MAX.
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink
4
K/W
K/W
0.2
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 40 V; I
E
= 0
V
CB
= 30 V; I
E
= 0
V
CE
= 35 V; R
BE
= 0
V
EB
= 1.5 V; I
C
= 0
5
2.5
25
100
mA
mA
mA
μ
A
I
CES
I
EBO
collector cut-off current
emitter cut-off current
MODE OF
OPERATION
f
(GHz)
V
CC
(V)
P
L
(W)
≥
12.5
typ. 15
G
p
(dB)
≥
7
typ. 7.8
η
C
(%)
≥
38
typ. 45
Z
i
; Z
L
(
)
Class-B
1.4 to 1.8
28
see Figs 6 and 7
Fig.3 Wideband test circuit board for 1.4 to 1.8 GHz operation.
Dimensions in mm.
Substrate: Epsilam printed circuit board.
Thickness: 0.635 mm.
Permittivity:
ε
r
= 10.
handbook, full pagewidth
100 pF
(ATC)
output
50
input
50
30
13.5
2
4.5
2
6
4.5
7.5
14.5
4.5
1
9
30
15
5
1
2.5
2
4
0.5
5
MSA110
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