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參數(shù)資料
| 型號(hào)： | PXTA14-T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA |
| 封裝： | PLASTIC, TO-243, SC-62, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 104K |
| 代理商： | PXTA14-T |
2004 Dec 09
3
NXP Semiconductors
Product data sheet
NPN Darlington transistor
PXTA14
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for the SOT89 in the General Part of associated
Handbook”.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for the SOT89 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
30
V
VCES
collector-emitter voltage
VBE = 0 V
30
V
VEBO
emitter-base voltage
open collector
10
V
IC
collector current (DC)
500
mA
ICM
peak collector current
1
A
IB
base current (DC)
200
mA
Ptot
total power dissipation
1.3
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
note 1
96
K/W
Rth(j-s)
thermal resistance from junction to solder point
16
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
IE = 0 A; VCB = 30 V
100
nA
ICES
collector-emitter cut-off current
VBE = 0 V; VCE = 30 V
100
nA
IEBO
emitter cut-off current
IC = 0 A; VEB = 10 V
100
nA
hFE
DC current gain
10000
20000
VCEsat
collector-emitter saturation voltage
IC = 100 mA; IB = 0.1 mA
1.5
V
VBEsat
base-emitter saturation voltage
IC = 100 mA; IB = 0.1 mA
1.5
V
VBEon
base-emitter on-state voltage
IC = 100 mA; VCE = 5 V
2
V
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 100 MHz
125
MHz
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