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參數(shù)資料
| 型號： | PXT2222 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN switching transistor |
| 中文描述： | 600 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 44K |
| 代理商： | PXT2222 |
1999 Apr 14
3
Philips Semiconductors
Product specification
NPN switching transistor
PXT2222A
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
100
20
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
amb
= 125
°
C
I
C
= 0; V
BE
= 5 V
I
C
= 0.1 mA; V
CE
= 10V
I
C
= 1 mA; V
CE
= 10 V
I
C
= 10 mA; V
CE
= 10 V
I
C
= 10 mA; V
C
= 10 V; T
amb
=
55
°
C
I
C
= 150 mA; V
CE
= 1 V
I
C
= 150 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 10 V
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
I
C
= 20 mA; V
CE
= 10 V; f = 100 MHz
I
C
= 200
μ
A; V
CE
= 5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
35
50
75
35
50
100
40
0.6
300
10
10
10
300
300
1
1.2
2
8
25
4
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
V
CEsat
collector-emitter saturation
voltage
mV
V
V
V
pF
pF
MHz
dB
V
BEsat
base-emitter saturation voltage
C
c
C
e
f
T
F
collector capacitance
emitter capacitance
transition frequency
noise figure
Switching times (between 10% and 90% levels);
(see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
=
15 mA
35
15
20
250
200
60
ns
ns
ns
ns
ns
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PXT2222A | 制造商:NXP Semiconductors 功能描述:Bipolar Junction Transistor, NPN Type, SOT-89 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 40V 0.1A 4-Pin(3+Tab) SOT-89 T/R |
| PXT2222A T/R | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 40V 0.1A 4-Pin(3+Tab) SOT-89 T/R |
| PXT2222A,115 | 功能描述:兩極晶體管 - BJT NPN SW 40V 100MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PXT2222A115 | 制造商:NXP Semiconductors 功能描述:SWITCHING TRANSISTOR PNP -60V -600MA |
| PXT2222AT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 600MA I(C) | SOT-89 |
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