- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299794 > PUMA77S16000A-45 10NS, 44 PLCC, COM TEMP(EPLD) PDF資料下載
參數(shù)資料
| 型號： | PUMA77S16000A-45 |
| 英文描述： | 10NS, 44 PLCC, COM TEMP(EPLD) |
| 中文描述： | X32號的SRAM模塊 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 196K |
| 代理商： | PUMA77S16000A-45 |
ISSUE 4.3 : April 2001
PUMA 2/77S16000/A - 020/025/35
6
Write Cycle No.2 Timing Waveform (5)
CS1~4
tWR(2)
t
CW
(4)
(6)
t AW
tWC
A0~A18
t
WP(1)
DW
tDH
WE1~4
D0~31out
D0~31in
WHZ(3,9)
t AS(3)
t OW
tOH
(7)
(8)
High-Z
AC Characteristics Notes
(1) A write occurs during the overlap (t
WP) of a low CS and a low WE.
(2) t
WR is measured from the earlier of CS or WE going high to the end of write cycle.
(3) During this period, I/O pins are in the output state. Input signals out of phase must not be applied.
(4) If the CS low transition occurs simultaneously with the WE low transition or after the WE low transition, outputs remain
in a high impedance state.
(5) OE is continuously low. (OE=V
IL)
(6) D
OUT is in the same phase as written data of this write cycle.
(7) D
OUT is the read data of next address.
(8) If CS is low during this period, I/O pins are in the output state. Input signals out of phase must not be applied.
(9) t
WHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to
output voltage levels. These parameters are sampled and not 100% tested.
Low V
CC Data Retention Timing Waveform
t R
tCDR
4.5V
2.2V
4.5V
2.2V
0V
DATA RETENTION MODE
Vcc
CS1~4
V DR
CS1~4 Vcc-0.2V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PUMA77S16000AMB-45 | x32 SRAM Module |
| PUMA77S16000AMB-55 | 25NS, 68 PLCC, IND TEMP(EPLD) |
| PUMA77S16000I-020 | 25NS, 100 PQFP, IND TEMP(EPLD) |
| PUMA77S16000I-025 | SRAM|512KX32|CMOS|QFP|68PIN|CERAMIC |
| PUMA77S16000I-35 | 15NS, 44 TQFP, IND TEMP(EPLD) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PUMB1 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR DUAL DIGITAL SOT-363 |
| PUMB1 T/R | 功能描述:開關(guān)晶體管 - 偏壓電阻器 TRNS DOUBL RET TAPE7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PUMB1,115 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 TRNS DOUBL RET TAPE7 RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PUMB1,135 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 Trans Digital BJT PNP 50V 100mA 6-Pin RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| PUMB10 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR DIGITAL DUAL SOT-363 制造商:NXP Semiconductors 功能描述:TRANSISTOR, DIGITAL, DUAL, SOT-363 制造商:NXP Semiconductors 功能描述:Dual P/P Transistor,2k2,47k,SOT-363 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。