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參數(shù)資料
| 型號： | PU7457 |
| 廠商： | PANASONIC CORP |
| 元件分類： | JFETs |
| 英文描述： | Silicon N-Channel Power F-MOS FET (with built-in zener diode) |
| 中文描述： | 3 A, 85 V, 0.6 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SIP10-A1, 10 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 47K |
| 代理商： | PU7457 |
1
Power Transistor Arrays (F-MOS FETs)
PU7457
Silicon N-Channel Power F-MOS FET (with built-in zener diode)
unit: mm
I
Features
G
High avalanche energy capacity
G
High electrostatic breakdown voltage
G
No secondary breakdown
G
High breakdown voltage, large allowable power dissipation
G
Allowing Low-voltage drive
I
Applications
G
Contactless relay
G
Diving circuit for a solenoid
G
Driving circuit for a motor
G
Control equipment
G
Switching power supply
G: Gate
D: Drain
S: Source
10-Lead Plastic SIL Package
I
Electrical Characteristics
(T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Fall time
Turn-off time (delay time)
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)1
R
DS(on)2
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
on
t
f
t
d(off)
Conditions
V
DS
= 80V, V
GS
= 0
V
GS
= ±20V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 2A
V
GS
= 4V, I
D
= 2A
V
DS
= 10V, I
D
= 2A
I
DR
= 3A, V
GS
= 0
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
GS
= 10V, I
D
= 2A
V
DD
= 50V, R
L
= 25
min
85
1
2.5
typ
300
400
4
130
160
25
0.2
0.3
1.5
max
10
±10
115
2.5
450
600
1.6
Unit
μ
A
μ
A
V
V
m
m
S
V
pF
pF
pF
μ
s
μ
s
μ
s
Internal Connection
25.3±0.2
8
9
1
4
4.0±0.2
2.54±0.2
0.8±0.25
9
2.54=22.86±0.25
0.5±0.15
1.0±0.25
0.5±0.15
C1.5±0.5
1
3
5
7
2
4
6
8
9 10
10
1
2
3
5
7
4
6
8
9
I
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
Non repetition
T
C
= 25°C
Ta = 25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
100 ± 15
±20
±3
±9
22.5
15
3.5
150
55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
*
L = 5mH, I
L
= 3A, 1 pulse
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