- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378088 > PTF211802 (INFINEON TECHNOLOGIES AG) LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz PDF資料下載
參數(shù)資料
| 型號(hào)： | PTF211802 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| 中文描述： | LDMOS射頻功率場(chǎng)效應(yīng)晶體管180瓦，2110至2170年兆赫 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 169K |
| 代理商： | PTF211802 |
Data Sheet
1
2004-02-13
Two–Carrier WCDMA Drive–Up
V
DD
= 28 V, I
DQ
= 2.0 A,
f
1
= 2140 MHz, f
2
= 2150 MHz, 3GPP
WCDMA signal, P/A R = 8 dB, 3.84 MHz BW
5
10
15
20
25
30
35
35
37
39
41
43
45
47
Output Power (dBm), Average
E
-60
-55
-50
-45
-40
-35
-30
I
IM3
Gain
Drain Efficiency
ACPR
LDMOS RF Power Field Effect Transistor
180 W, 2110–2170 MHz
Description
The PTF211802 is a 180 W, internally matched, laterally double–diffused,
GOLDMOS
push–pull FET intended for WCDMA applications from 2110 to
2170 MHz. Full gold metallization ensures excellent device lifetime and
reliability.
Features
Broadband internal matching
Typical two–carrier WCDMA performance
- Average output power = 38 W
- Gain = 15 dB
- Efficiency = 25%
- IM3 = –37 dBc
- ACPR < –42 dBc
Typical CW performance
- Output power at P–1dB = 180 W
- Efficiency = 50%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
180 W (CW) output power
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 2.0 A, P
OUT
= 38 W AVG
f
1
= 2140 MHz, f
2
= 2150 MHz, two–carrier 3GPP, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol
IM3
G
ps
η
D
Min
—
—
—
Typ
–37
15
25
Max
—
—
—
Units
dBc
dB
%
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 2.0 A, P
OUT
= 60 W PEP, f = 2110 MHz, tone spacing = 5 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
η
D
IMD
Min
12.5
20
—
Typ
15
22
–40
Max
—
—
–38
Units
dB
%
dBc
PTF211802A
Package 20275
PTF211802
ESD:
Electrostatic discharge sensitive device — observe handling precautions!
PTF211802E
Package 30275
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF211802A | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| PTF211802E | LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| PTH04000WAS1 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| PTH04000WAZ1 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| PTH08000WAZ1 | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF211802A | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| PTF211802E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz |
| PTF21524 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Miniature Power Relay |
| PTF21615 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Miniature Power Relay PTF |
| PTF21730 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Miniature Power Relay |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。