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參數(shù)資料
| 型號： | PTF10160 |
| 廠商： | ERICSSON |
| 英文描述： | 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| 中文描述： | 85瓦，860-960兆赫GOLDMOS場效應晶體管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 253K |
| 代理商： | PTF10160 |
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 26 V, P
OUT
= 85 W, I
DQ
= 700 mA, f = 960 MHz)
Power Output at 1 dB Compression
(V
DD
= 26 V, I
DQ
= 700 mA, f = 960 MHz)
Drain Efficiency
(V
DD
= 26 V, P
OUT
= 85 W, I
DQ
= 700 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 26 V, P
OUT
= 85 W, I
DQ
= 700 mA, f = 960 MHz
—all phase angles at frequency of test)
G
pe
15
16
—
dB
P-1dB
85
90
—
Watts
50
53
—
%
—
—
5:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
Description
The PTF 10160 is an internally matched 85–watt
GOLDMOS
FET
intended for cellular, GSM, D-AMPS and EDGE applications. It oper-
ates with 53% efficiency and 16 dB typical gain. Full gold metalliza-
tion ensures excellent device lifetime and reliability.
PTF 10160
85 Watts, 860–960 MHz
GOLDMOS
Field Effect Transistor
1234560055A
0
20
40
60
80
100
120
0
1
2
3
4
5
Input Power (Watts)
O
0
10
20
30
40
50
60
70
E
V
DD
= 26 V
I
DQ
= 700 mA
f = 960 MHz
Typical Output Power& Efficiency vs. Input Power
Efficiency
Output Power
Package 20248
INTERNALLY MATCHED
Performance at 960 MHz, 26 Volts
- Output Power = 85 Watts
- Power Gain = 16 dB Typ
- Efficiency = 53% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
相關PDF資料 |
PDF描述 |
|---|---|
| PTF10161 | 165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor |
| PTF10162 | 18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10193 | 12 Watts, 860-960 MHz GOLDMOS⑩ Field Effect Transistor |
| PTF10195 | 125 Watts, 869-894 MHz GOLDMOS Field Effect Transistor |
| PTF102027 | 40 Watts, 925-960 MHz GOLDMOS Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10161 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor |
| PTF10162 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10193 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10195 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:125 Watts, 869-894 MHz GOLDMOS Field Effect Transistor |
| PTF102002 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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