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參數(shù)資料
| 型號(hào)： | PTF10119 |
| 廠商： | ERICSSON |
| 英文描述： | 12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| 中文描述： | 12瓦，2.1-2.2 GHz的GOLDMOS場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 141K |
| 代理商： | PTF10119 |
e
1
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
±20
Vdc
Operating Junction Temperature
T
J
200
°C
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
55
0.31
Watts
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
q
JC
3.2
°C/W
INTERNALLY MATCHED
Performance at 2.17 GHz, 28 Volts
- Output Power = 12 Watts Min
- Power Gain = 11 dB Typ
- Efficiency = 43% Typ @ P-1dB
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% lot traceability
PTF 10119
12 Watts, 2.1–2.2 GHz
GOLDMOS
Field Effect Transistor
10119
0
4
8
12
16
20
0
0.2
0.4
0.6
0.8
1
1.2
Input Power (Watts)
O
V
DD
= 28 V
I
DQ
= 160 mA
f = 2170 MHz
Typical Output Power vs. Input Power
Package 20222
Description
The PTF 10119 is an internally matched, common source, N-channel
enhancement-mode lateral MOSFET intended for WCDMA
applications from 2.1 to 2.2 GHz. It is rated at 12 watts power output.
Nitride surface passivation and gold metallization ensure excellent
device reliability.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF10120 | 120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10122 | 50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10125 | 135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| PTF10133 | 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10134 | 100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10120 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10122 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10125 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| PTF10133 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10134 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
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