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參數(shù)資料
| 型號： | PTF10052 |
| 廠商： | ERICSSON |
| 英文描述： | 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| 中文描述： | 35瓦，1.0 GHz的GOLDMOS場效應晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 498K |
| 代理商： | PTF10052 |
e
1
PTF 10052
35 Watts, 1.0 GHz
GOLDMOS
Field Effect Transistor
A-1234569725
0
10
20
30
40
50
0
1
2
3
Input Power (Watts)
O
0
20
40
60
80
100
E
V
DD
= 28 V
I
DQ
= 300 mA
f = 960 MHz
Typical Output Power & Efficiency
vs. Input Power
Output Pow er (W)
Efficiency (%)
Package
20222
Description
The PTF 10052 is a 35 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 55% efficiency and
13.5 dB of gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
Performance at 960 MHz, 28 Volts
- Output Power = 35 Watts
- Power Gain = 13.5 dB Typ
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% Lot Traceability
Available in Package 20222 as PTF 10007
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 35 W, I
DQ
= 300 mA, f = 960 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 300 mA, f = 960 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 35 W, I
DQ
= 300 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 35 W, I
DQ
= 300 mA, f = 960 MHz—
all phase angles at frequency of test)
G
ps
12.0
13.5
—
dB
P-1dB
35
—
—
Watts
h
50
55
—
%
Y
—
—
10:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
Package
20235
10052
B-1234569916
相關PDF資料 |
PDF描述 |
|---|---|
| PTF10053 | 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10065 | 30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor |
| PTF10100 | 165 Watts, 860-900 MHz LDMOS Field Effect Transistor |
| PTF10107 | 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10111 | 6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10053 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10065 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor |
| PTF10100 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:165 Watts, 860-900 MHz LDMOS Field Effect Transistor |
| PTF10107 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10111 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor |
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