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參數(shù)資料
| 型號(hào)： | PT600T |
| 廠商： | Sharp Corporation |
| 英文描述： | Ultra-compact Chip Part Type Phototransistor |
| 中文描述： | 超小型芯片的一部分型光電晶體管 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 15K |
| 代理商： | PT600T |
(Ta = 25C)
Features
Applications
Outline Dimensions
Absolute Maximum Ratings
(Unit : mm)
PT600T
Ultra-compact Chip Part Type
Phototransistor
PT600T
1. For liquid crystal backlight LED ON-OFF control
2. Pagers
3. Cellular phones
4. Other portable equipment
I
C
I
CEO
V
CE(sat)
λ
p
t
r
t
f
θ
E
e
-
-
-
nm
V
CE
R
L
C
-
μ
s
-
-
(Ta = 25C)
Electro-optical Characteristics
Parameter
Symbol
Conditions
MIN.
0.7
TYP.
3.5
MAX.
9.6
0.1
0.4
Unit
mA
μ
A
V
Collector current
Dark current
Collector-emitter saturation voltage
Peak sensitivity wavelength
Response time
Half intensity angle
*1 Hand soldering temperature, for MAX. 3 seconds
-
= 1mA
= 1k
-
E
e
E
e
= 10mW/cm
2
, I
C
= 0.5mA
= 5mW/cm
2
, V
CE
= 5V
= 0, V
CE
=20V
-
-
0.2
880
10
± 60
-
1. Ultra-compact type (1.6 x1.6 x 0.8 mm)
2. Thin type (thickness : 0.8 mm)
3. Surface mounting type (leadless)
4. Taped model (4000 pcs/reel)
= 20V, I
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
T
sol
Rating
35
6
20
50
-25 to +85
-25 to +100
260
Unit
V
V
mA
mW
C
C
C
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector Power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
*2
*2 E : Irradiance by CIE standard light source A (tungsten lamp)
Parameter
Fall
Rise
2 Emitter
*
Tolerance :
1 Collector
2
1
2
1
Polarity marking
*
Terminal connection
0.1mm
*
Plating area
0.3
0.3
0
0
1.0
1.2
transparent resin
0.3
0.8
1.6
1
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
”
“
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
I
I
I
I
I
±
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| PT-601 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 90A I(C) | TO-114 |
| PT601T | 功能描述:光電晶體管 SMT 880nm 20mA RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| PT-602 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 90A I(C) | TO-114 |
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