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參數(shù)資料
| 型號(hào)： | PT425 |
| 元件分類： | 晶閘管 |
| 英文描述： | 400 V, 25 A, 4 QUADRANT LOGIC LEVEL TRIAC |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 487K |
| 代理商： | PT425 |
SOLID STATE CONTROL DEVICES
25
WARNING
Isolated stud products should be handled with care. The ceramic used
in these thyristors contains BERYLLIUM OXIDE as a major ingredient.
DO NOT crush, grind or abrade these portions of the thyristors because
the dust resulting from such action may be HARZARDOUS if INHALED.
MAXIMUM RATINGS
SYMBOL VDRM
DEVICE NUMBERS
UNITS
REPETITIVE PEAK OFF-STATE VOLTAGE (1)
GATE OPEN, AND TJ = 110° C
VDRM
200
400
600
*T215
*T415
*T615
*T225
*T425
*T625
*T230
*T430
*T630
*T240
*T440
*T640
VOLT
RMS ON-STATE CURRENT AT TC = 80 C AND
CONDUCTION, ANGLE OF 360
IT(RMS)
15
25
30
40
AMP
PEAK SURGE (NON-REPETITIVE) ON-STATE
CURRENT, ONE-CYCLE, AT 50HZ OR 60HZ
ITSM
150
250
300
400
AMP
PEAK GATE - TRIGGER CURRENT FOR 3SEC. MAX.
IGTM
4
12
AMP
PEAK GATE – POWER DISSIPATION AT IGT < IGTM
PGM
40
WATT
AVERAGE GATE - POWER DISSIPATION
PG(AV)
0.8
0.75
WATT
STORAGE TEMPERATURE RANGE
TSTG
-40 to +150
°C
OPERATING TEMPERATURE RANGE, TJ
TOPER
-40 to +110
°C
ELECTRICAL CHARACTERISTICS
AT SPECIFIED CASE TEMPERATURE
PEAK OFF - STATE CURRENT (1) GATE OPEN
TC = 110° C VDRM = MAX. RATING
IDRM
1.0
MA
MAX.
MAXIMUM ON - STATE VOLTAGE, (1)
AT TC = 25° C AND IT = RATED AMPS
VTM
2.2
2.5
2.0
VOLT
MAX.
DC HOLDING CURRENT, (1) GATE
OPEN AND TC = 25° C
IHO
60
MA
MAX.
CRITICAL RATE-OF-RISE OF OFF-
STATE VOLTAGE, (1) FOR VD =
VDRM GATE OPEN, TC = 110° C
CRITICAL
dv/dt
100
200
V/SEC.
CRITICAL RATE-OF-RISE OF
COMMUTATION VOLTAGE, (1) AT
TC = 80° C, GATE UNENERGIZED,
VD = VDRM, IT = IT (RMS)
COMMUTATING
dv/dt
3
V/SEC.
DC GATE - TRIGGER CURRENT FOR
VD = 12VDC. RL = 30
AND AT TC = 25° C
(T2 + GATE + T2 - GATE-) Q 1 & 3
(T2 + GATE - T2 - GATE +) Q 2 & 4
IGT
(2)
100 I, III
150 II, IV
100 I, III
150 II, IV
100 I, III
150 II, IV
100 I, III
150 II, IV
MA
MAX.
DC GATE - TRIGGER VOLTAGE FOR
VD = 12VDC. RL = 30
AND AT TC = 25° C
VGT
2.5
VOLT
MAX.
GATE CONTROLLED TURN-ON TIME
FOR VD = VDRM IGT = 200MA, TR = 0.1 SEC.
IT = 10A (PEAK) AND TC = 25° C
TGT
3
SEC.
THERMAL RESISTANCE, JUNCTION-TO-CASE
PRESS-FIT
STUD
ISOLATED STUD
R0J-C
1.8
2.1
1.8
2.1
1.8
2.1
1.8
2.1
°C / WATT
TYP
Notes:
(1) All values apply in either direction.
(2) Other gate options available; Consult factory.
P
PRESS FIT
SP
PRESS FIT WITH STUD MOUNT
SIP
PRESS FIT WITH ISOLATED STUD
MOUNT
*Add prefix for package style desired.
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