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參數(shù)資料
| 型號： | PSS9014C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN general purpose transistor |
| 中文描述： | 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43A, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 59K |
| 代理商： | PSS9014C |
2004 Aug 10
3
Philips Semiconductors
Product specification
NPN general purpose transistor
PSS9014C
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
200
200
580
100
TYP.
300
300
200
815
650
220
MAX.
UNIT
I
CBO
collector-base cut-off current
V
CB
= 30 V; I
E
= 0
V
CB
= 30 V; I
E
= 0; T
amb
= 150
°
C
V
CE
= 30 V; I
B
= 0
V
EB
= 5 V; I
C
= 0
I
C
= 1 mA; V
CE
= 5 V
I
C
= 2 mA; V
CE
= 5 V
I
C
= 100 mA; I
B
= 5 mA; note 1
I
C
= 100 mA; I
B
= 0.5 mA; note 1
I
C
= 2 mA; V
CE
= 5 V
I
C
= 50 mA; V
CE
= 10 V;
f = 100 MHz
V
CB
= 10 V; I
E
= i
e
= 0; f = 1 MHz
V
CE
= 5 V; I
C
= 0.2 mA;
R
S
= 2 k
; f = 1 kHz; B = 200 Hz
15
5
100
100
600
450
300
850
700
nA
μ
A
nA
nA
I
CEO
I
EBO
h
FE
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
V
CEsat
V
BEsat
V
BEon
f
T
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
mV
mV
mV
MHz
C
c
F
collector capacitance
noise figure
1.6
1.75
10
pF
dB
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