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參數(shù)資料
| 型號(hào)： | PSS9013G |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 20 V NPN general purpose transistors |
| 中文描述： | 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43, 3 PIN |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 90K |
| 代理商： | PSS9013G |
2004 Aug 10
2
Philips Semiconductors
Product specification
20 V NPN general purpose transistors
PSS9013 series
FEATURES
High power dissipation: 710 mW
Low collector capacitance
Low collector-emitter saturation voltage
High current capability.
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN general purpose transistor in a SOT54 (TO-92)
leaded plastic package. PNP complement:
PSS9012 series.
MARKING
QUICK REFERENCE DATA
PINNING
TYPE NUMBER
MARKING CODE
PSS9013G
PSS9013H
S9013G
S9013H
SYMBOL
PARAMETER
MAX.
UNIT
V
CEO
I
C
I
CM
collector-emitter voltage
collector current (DC)
peak collector current
20
500
1
V
mA
A
PIN
DESCRIPTION
1
2
3
collector
base
emitter
handbook, halfpage
1
3
2
MAM279
1
2
3
Fig.1
Simplified outline (SOT54; TO-92) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1.
Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
40
20
5
500
1
100
710
+150
150
+150
V
V
V
mA
A
mA
mW
°
C
°
C
°
C
T
amb
≤
25
°
C; note 1
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| PSS9013H | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:20 V NPN general purpose transistors |
| PSS9014C | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN general purpose transistor |
| PSS9015B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP general purpose transistor |
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