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參數(shù)資料
| 型號(hào)： | PSS8550D |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP medium power 25 V transistor |
| 中文描述： | 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43A, 3 PIN |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 104K |
| 代理商： | PSS8550D |
2004 Aug 10
2
Philips Semiconductors
Product specification
PNP medium power 25 V transistor
PSS8550
FEATURES
High total power dissipation
High current capability.
APPLICATIONS
Medium power switching and muting
Amplification
Portable radio output amplifier (class-B, push-pull).
DESCRIPTION
PNP transistor in a SOT54 (TO-92) plastic package.
NPN complement: PSS8050.
MARKING
QUICK REFERENCE DATA
PINNING
TYPE NUMBER
MARKING CODE
PSS8550C
PSS8550D
S8550C
S8550D
SYMBOL
PARAMETER
MAX.
25
1.5
UNIT
V
CEO
I
C
collector-emitter voltage
collector current (DC)
V
A
PIN
DESCRIPTION
1
2
3
collector
base
emitter
handbook, halfpage
1
3
2
MSB033
Fig.1
Simplified outline (SOT54).
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1.
2.
3.
Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Operated under pulsed
conditions: pulse width t
p
≤
1 s; duty cycle
δ ≤
0.75%.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
40
25
6
1.5
2
300
1
850
900
1
+150
150
+150
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
open emitter
open base
open collector
65
65
V
V
V
A
A
mA
A
mW
mW
W
°
C
°
C
°
C
T
amb
≤
25
°
C; note 1
T
amb
≤
25
°
C; note 2
T
amb
≤
25
°
C; note 3
T
stg
T
j
T
amb
storage temperature
junction temperature
operating ambient temperature
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