參數(shù)資料
型號(hào): PSS8550C
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: PNP medium power 25 V transistor
中文描述: 1500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, SC-43A, 3 PIN
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 104K
代理商: PSS8550C
2004 Aug 10
3
Philips Semiconductors
Product specification
PNP medium power 25 V transistor
PSS8550
THERMAL CHARACTERISTICS
Notes
1.
2.
3.
Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
Operated under pulsed conditions: pulse width t
p
1 s; duty cycle
δ ≤
0.75%.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air; note 1
in free air; note 2
in free air; note 3
147
139
125
K/W
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
100
50
UNIT
I
CBO
collector-base cut-off current
V
CB
=
35 V; I
E
= 0
V
CB
=
35 V; I
E
= 0;
T
amb
= 150
°
C
V
CE
=
25 V; I
B
= 0
V
EB
=
6 V; I
C
= 0
I
C
=
5 mA; V
CE
=
1 V
I
C
=
800 mA; V
CE
=
1 V
I
C
=
100 mA; V
CE
=
1 V
nA
μ
A
I
CEO
I
EBO
h
FE
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
45
40
100
100
nA
nA
DC current gain
PSS8550C
PSS8550D
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
120
160
100
190
200
300
500
1.2
1
V
CEsat
V
BEsat
V
BEon
f
T
I
C
=
800 mA; I
B
=
80 mA
I
C
=
800 mA; I
B
=
80 mA
I
C
=
10 mA; V
CE
=
1 V
I
C
=
50 mA; V
CE
=
10 V;
f = 100 MHz
V
CB
= 10 V; I
E
= i
e
= 0; f = 1 MHz
mV
V
V
MHz
C
c
collector capacitance
12
pF
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