
2004 Aug 10
2
Philips Semiconductors
Product specification
NPN medium power 25 V transistor
PSS8050
FEATURES
High total power dissipation
High current capability.
APPLICATIONS
Medium power switching and muting
Amplification
Portable radio output amplifier (class-B, push-pull).
DESCRIPTION
NPN transistor in a SOT54 (TO-92) plastic package.
PNP complement: PSS8550.
MARKING
QUICK REFERENCE DATA
PINNING
TYPE NUMBER
MARKING CODE
PSS8050C
PSS8050D
S8050C
S8050D
SYMBOL
PARAMETER
MAX.
UNIT
V
CEO
I
C
collector-emitter voltage
collector current (DC)
25
1.5
V
A
PIN
DESCRIPTION
1
2
3
collector
base
emitter
handbook, halfpage
1
3
2
MSB033
Fig.1 Simplified outline (SOT54).
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1.
2.
3.
Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. Operated under pulsed
conditions: pulse width t
p
≤
1 s; duty cycle
δ ≤
0.75%.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
open emitter
open base
open collector
65
65
40
25
6
1.5
2
300
1
850
900
1
+150
150
+150
V
V
V
A
A
mA
A
mW
mW
W
°
C
°
C
°
C
T
amb
≤
25
°
C; note 1
T
amb
≤
25
°
C; note 2
T
amb
≤
25
°
C; note 3
T
stg
T
j
T
amb
storage temperature
junction temperature
operating ambient temperature