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參數(shù)資料
| 型號(hào)： | PSMN5R6-100PS |
| 元件分類： | 開關(guān) |
| 英文描述： | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 525K |
| 代理商： | PSMN5R6-100PS |
A-78
APEM
www.apem.com
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Distinctive features
A
K
Approval and lists
CECC 96201-005
CECC 96201-008
MUAHAG and QPL listed (Europe only)
French defence approved : DAT list No A5999 X001.
This range of professional toggle switches is suitable for use in military and
other high specification environments.
K
Contacts
Highly reliable contacts suitable for low level applications (10mA 50mV -
10A 5VDC min.) or power applications (2A 250VAC - 4A 125VAC -
4A 30VDC max.)
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Pinned lever
The base of the switch lever is pinned to the bushing, thus earthing the lever to
the bushing. This also provides strain relief to protect the switch if accidentally
knocked.
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Double shell case
For high mechanical strength and high electrical insulation.
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Compact size
The small rear end of the switch allows space saving behind the panel.
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Finish
Matt black finish on body, bushing, lever and hardware.
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Sealing
Panel sealed to IP 67, these switches are frontal sealed by two O-rings and
have full rear end sealing.
K
Accessories
A comprehensive range of protection boots (both full and half length), locking
levers and security caps are available.
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| PSMN5R6-100XS | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PSMN5R6-100PS,127 | 功能描述:MOSFET MOSFET N-CH 100V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN5R6-100PS127 | 制造商:NXP Semiconductors 功能描述:MOSFET N CH 100V 100A 3-TO-220AB |
| PSMN5R6-100XS | 制造商:NXP Semiconductors 功能描述:MOSFET, N-CH, 100V, 61.8A, TO220F 制造商:NXP Semiconductors 功能描述:MOSFET, N-CH, 100V, 61.8A, TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:61.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V ;RoHS Compliant: Yes |
| PSMN5R6-100XS,127 | 功能描述:MOSFET N-CH 100V 5.6 MOHMS STD LVL MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PSMN5R6-60YLX | 功能描述:MOSFET N-CH 60V LFPAK56 制造商:nexperia usa inc. 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 FET 類型:N 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:60V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:100A（Tc） 驅(qū)動(dòng)電壓（最大 Rds On，最小 Rds On）:5V，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:2.1V @ 1mA 不同 Vgs 時(shí)的柵極電荷?（Qg）（最大值）:66.8nC @ 10V Vgs（最大值）:±20V 不同 Vds 時(shí)的輸入電容（Ciss）（最大值）:5026pF @ 25V FET 功能:- 功率耗散（最大值）:167W（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:5.6 毫歐 @ 25A，10V 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 供應(yīng)商器件封裝:LFPAK56，Power-SO8 封裝/外殼:SC-100，SOT-669 標(biāo)準(zhǔn)包裝:1 |
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