參數(shù)資料
    型號: PSD9543V70JIT
    廠商: 意法半導(dǎo)體
    英文描述: Flash In-System Programmable ISP Peripherals For 8-bit MCUs
    中文描述: Flash在系統(tǒng)可編程ISP的外設(shè)的8位微控制器
    文件頁數(shù): 20/110頁
    文件大?。?/td> 1737K
    代理商: PSD9543V70JIT
    PSD813F2, PSD833F2, PSD834F2, PSD853F2, PSD854F2
    20/110
    Primary Flash Memory and Secondary Flash
    memory Description
    The primary Flash memory is divided evenly into
    eight equal sectors. The secondary Flash memory
    is divided into four equal sectors. Each sector of
    either memory block can be separately protected
    from Program and Erase cycles.
    Flash memory may be erased on a sector-by-sec-
    tor basis. Flash sector erasure may be suspended
    while data is read from other sectors of the block
    and then resumed after reading.
    During a Program or Erase cycle in Flash memory,
    the status can be output on Ready/Busy (PC3).
    This pin is set up using PSDsoft Express Configu-
    ration.
    Memory Block Select Signals
    The DPLD generates the Select signals for all the
    internal memory blocks (see the section entitled
    PLDS, page 33
    ). Each of the eight sectors of the
    primary Flash memory has a Select signal (FS0-
    FS7) which can contain up to three product terms.
    Each of the four sectors of the secondary Flash
    memory has a Select signal (CSBOOT0-
    CSBOOT3) which can contain up to three product
    terms. Having three product terms for each Select
    signal allows a given sector to be mapped in differ-
    ent areas of system memory. When using a MCU
    with separate Program and Data space, these
    flexible Select signals allow dynamic re-mapping
    of sectors from one memory space to the other.
    Ready/Busy (PC3).
    This signal can be used to
    output the Ready/Busy status of the PSD. The out-
    put on Ready/Busy (PC3) is a 0 (Busy) when Flash
    memory is being written to,
    or
    when Flash memory
    is being erased. The output is a 1 (Ready) when
    no WRITE or Erase cycle is in progress.
    Memory Operation.
    The primary Flash memory
    and secondary Flash memory are addressed
    through the MCU Bus Interface. The MCU can ac-
    cess these memories in one of two ways:
    The MCU can execute a typical bus WRITE or
    READ
    operation
    just as it would if accessing a
    RAM or ROM device using standard bus
    cycles.
    The MCU can execute a specific instruction
    that consists of several WRITE and READ
    operations. This involves writing specific data
    patterns to special addresses within the Flash
    memory to invoke an embedded algorithm.
    These instructions are summarized in
    Table
    9., page 21
    .
    Typically, the MCU can read Flash memory using
    READ operations, just as it would read a ROM de-
    vice. However, Flash memory can only be altered
    using specific Erase and Program instructions. For
    example, the MCU cannot write a single byte di-
    rectly to Flash memory as it would write a byte to
    RAM. To program a byte into Flash memory, the
    MCU must execute a Program instruction, then
    test the status of the Program cycle. This status
    test is achieved by a READ operation or polling
    Ready/Busy (PC3).
    Flash memory can also be read by using special
    instructions to retrieve particular Flash device in-
    formation (sector protect status and ID).
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