參數(shù)資料
型號(hào)： PS11017
廠商： Powerex Power Semiconductors
英文描述： FLAT-BASE TYPE INSULATED TYPE
中文描述： 平性基地型絕緣型
文件頁(yè)數(shù)： 3/6頁(yè)
文件大小： 2944K
代理商： PS11017
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11017
FLAT-BASE TYPE
INSULATED TYPE
May
200
1
Tc
(Fig. 3)
LABEL
1.75
2.4
2.9
4.5
0.031
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
—
—
—
—
—
Junction to case Thermal
Resistance
Condition
Symbol
T
j
T
stg
T
C
Item
Ratings
–20 ~ +125
–40 ~ +125
–20 ~ +100
Unit
°
C
°
C
°
C
(Note 2)
—
(Fig. 3)
60 Hz sinusoidal AC applied between all terminals and
the base plate for 1 minute.
Mounting screw: M4.0
V
iso
Junction temperature
Storage temperature
Module case operating temperature
Isolation voltage
Mounting torque
2500
0.98 ~ 1.47
Vrms
N·m
TOTAL SYSTEM
Note 2) The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the ASIPM to ensure safe operation. How-
ever, these power elements can endure instantaneous junction temperature as high as 150
°
C instantaneously . To make use of this ad-
ditional temperature allowance, a detailed study of the exact application conditions is required and, accordingly, necessary information
is requested to be provided before use.
CASE TEMPERATURE MEASUREMENT POINT (3mm from the base surface)
Condition
Symbol
Item
Ratings
Typ.
—
—
—
—
—
Inverter IGBT (1/6)
Inverter FWDi (1/6)
Brake IGBT
Brake FWDi
Case to fin, thermal grease applied
Rth(j-c)
Q
Rth(j-c)
F
Rth(j-c)
Q
Rth(j-c)
F
Rth(c-f)
Min.
THERMAL RESISTANCE
Max.
Unit
Contact Thermal Resistance
Circuit current
Input on threshold voltage
Input off threshold voltage
Input pull-up resister
Min.
—
—
V
FBr
ton
tc(on)
toff
tc(off)
trr
Collector-emitter saturation voltage
FWDi forward voltage
Brake IGBT
Collector-emitter saturation voltage
Brake diode forward voltage
V
CE(sat)
V
EC
Ratings
Typ.
—
—
V
DH
= V
DB
= 15V, Input = ON, Tj = 25
°
C, Ic = 50A
Tj = 25
°
C, Ic = –50A, Input = OFF
V
DH
= 15V, Input = ON, Tj = 25
°
C, Ic = 15A
Condition
Symbol
Item
Max.
2.9
2.9
Unit
No destruction
F
O
output by protection operation
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, V
DH
= 15V, V
DB
= 15V unless otherwise noted)
I
DH
V
th(on)
V
th(off)
R
i
No destruction
No protecting operation
No F
O
output
V
CE(sat)Br
Tj = 25
°
C, I
F
= 15A, Input = OFF
1/2 Bridge inductive, Input = ON
V
CC
= 300V, Ic = 50A, Tj = 125
°
C
V
DH
= 15V, V
DB
= 15V
Note : ton, toff include delay time of the internal control
circuit
V
CC
≤
400V, Input = ON (one-shot)
Tj = 125
°
C start
13.5V
≤
V
DH
= V
DB
≤
16.5V
V
CC
≤
400V, Tj
≤
125
°
C,
Ic < I
OL
(CL) operation level, Input = ON,
13.5V
≤
V
DH
= V
DB
≤
16.5V
V
DH
= 15V, V
CIN
= 5V
Switching times
FWD reverse recovery time
Short circuit endurance
(Output, Arm, and Load,
Short Circuit Modes)
Switching SOA
—
—
—
—
—
0.8
2.5
—
Integrated between input terminal-V
DH
—
0.40
—
—
0.40
1.5
0.6
—
1.4
3.0
150
—
0.8
0.15
3.5
1.0
2.4
1.3
150
2.0
4.0
—
2.9
2.0
—
V
V
V
V
μ
s
μ
s
μ
s
μ
s
μ
s
mA
V
V
k
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