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參數(shù)資料
| 型號(hào)： | PQ160QH06N |
| 廠商： | NIHON INTER ELECTRONICS CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SBD MODULE |
| 中文描述： | 160 A, 60 V, SILICON, RECTIFIER DIODE |
| 封裝： | MODULE-4 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 56K |
| 代理商： | PQ160QH06N |
SBD MODULE
160A/60V
PQ160QH06N
Maximum Ratings
Approx Net Weight:250g
Voltage
Rating
Symbol
PQ160QH06N
60
Unit
Repetitive Peak Reverse Voltage
Repetitive Peak Surge Reverse Voltage
E lectrical Rating
V
RRM
V
RRSM
V
V
65 (Pulse Width
≤ 1 μ
sec, Duty
≤
1/50)
Condition
50Hz Half Sine Wave, per Arm
Tc=Tl=98
°
C
(Tl=Terminal Temperature)
I
F(RMS)
Per Arm
50 Hz Half Sine Wave,1cycle
Non-repetitive, per Arm
Tjw
Tstg
Case mounting(recommended)
Ftor
Terminal Screw(recommended)
Rating
Average Rectified Output Current
I
O
160
A
RMS Forward Current
226
A
Surge Forward Current
I
FSM
2800
A
Operating J unctionTemperature Range
Storage Temperature Range
-40 to +150
-40 to +125
3.0
2.6
°
C
°
C
Mounting torque
Electrical
Thermal Characteristics
N
m
Characteristics
Symbol
V
FM
I
RM
Rth(j-c) J unction to Case, per Arm
Rth(c-f)Base Plate to Heat Sink with Thermal
Compound
Test Conditions
Max. Unit
0.62
1000
0.34
Peak Forward Voltage
Peak Reverse Current
I
FM
= 120A, Tj=25
°
C, per Arm
V
RM
= V
RRM,
Tj= 150
°
C, per Arm
V
mA
Thermal Resistance
0.03
°
C/W
We recommend the use of the electrical conductive grease.
In case of parallel use, consider in balance of the current of each arms.
Terminal Temperature must be less than Tc. (ex. Cooled by air blow)
FEATURES
* Four-Arms, Cathode Common to Base Plate
* Low Forward Voltage Drop
* Low Power Loss, High Efficiency
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* High Frequency Rectification
OUTLINE DRAWING
φ
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