參數(shù)資料
型號(hào): PPBSS8110Y
廠商: NXP Semiconductors N.V.
英文描述: 100 V, 1 A NPN low VCEsat (BISS) transistor
中文描述: 100伏,1安NPN型低飽和壓降(BISS)晶體管
文件頁數(shù): 2/13頁
文件大小: 107K
代理商: PPBSS8110Y
9397 750 12567
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 2 June 2004
2 of 13
Philips Semiconductors
PBSS8110Y
100 V, 1 A NPN low V
CEsat
(BISS) transistor
2.
Pinning information
3.
Ordering information
4.
Marking
[1]
* = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
5.
Limiting values
Table 2:
Pin
1, 2, 5, 6
3
4
Discrete pinning
Description
collector
base
emitter
Simplified outline
Symbol
SOT363
1
2
3
6
5
4
sym014
1, 2, 5, 6
4
3
Table 3:
Type number
Ordering information
Package
Name
-
Description
plastic surface mounted package; 6 leads
Version
SOT363
PBSS8110Y
Table 4:
Type number
PPBSS8110Y
Marking
Marking code
[1]
81*
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
CBO
collector-base voltage
V
CEO
collector-emitter voltage
V
EBO
emitter-base voltage
I
CM
peak collector current
I
C
continuous collector current
I
B
continuous base current
P
tot
total power dissipation
Limiting values
Conditions
open emitter
open base
open collector
T
j(max)
Min
-
-
-
-
-
-
-
-
-
Max
120
100
5
3
1
0.3
290
480
625
Unit
V
V
V
A
A
A
mW
mW
mW
T
amb
25
°
C
[1]
[2]
[3]
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