參數(shù)資料
型號： PP225D120
廠商： Powerex Power Semiconductors
英文描述： POW-R-PAK 225A / 1200V Half Bridge IGBT Assembly
中文描述： 的POW - r -巴基斯坦225A章/ 1200伏半橋IGBT的大會
文件頁數(shù)： 2/6頁
文件大?。?/td> 363K
代理商： PP225D120
TENTATIVE
PP225D120
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
POW-R-PAK
TM
225A / 1200V
Half Bridge IGBT Assembly
Absolute Maximum Ratings, T
j
= 25°C unless otherwise specified
General
PP225D120 (-)
- 2 -
Symbol
Units
IGBT Junction Temperature
T
j
-40 to +150
°C
Storage Temperature
T
stg
-40 to +125
°C
Operating Temperature
T
op
-25 to +85
°C
Voltage Applied to DC terminals
V
CC
800
Volts
Isolation Voltage, AC 1 minute, 60Hz sinusoidal
V
iso
2500
Volts
IGBT Inverter
Collector Current (T
C
= 25°C)
I
C
225
Amperes
Peak Collector Current (T
j
< 150°C)
I
CM
450
Amperes
Emitter Current
I
E
225
Amperes
Peak Emitter Current
I
EM
450
Amperes
Maximum Collector Dissipation (T
j
< 150°C)
P
c
1350
Watts
Gate Drive Board
Unregulated +24V Power Supply
30
Volts
Regulated +15V Power Supply
18
Volts
PWM Signal Input Voltage
20
Volts
Fault Output Supply Voltage
30
Volts
Fault Output Current
IGBT Inverter Electrical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics
50
mA
Symbol
Test Conditions
Min
Typ
Max
Units
Collector Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
-
-
1
mA
I
C
= 225A, T
j
= 25°C
-
1.8
2.4
Volts
Collector – Emitter Saturation Voltage
V
CE(sat)
I
C
= 225A, T
j
= 125°C
-
1.9
-
Volts
Emitter – Collector Voltage
V
EC
I
E
= 225A
-
-
3.2
Volts
t
d(on)
-
-
100
ns
t
r
-
-
50
ns
t
d(off)
-
-
400
ns
Inductive Load Switching Times
t
f
-
-
300
ns
Diode Reverse Recovery Time
t
rr
-
-
150
ns
Diode Reverse Recovery Charge
Q
rr
V
CC
= 600V
I
C
= 225A
V
GE
= 15V
R
G
= 4.2
-
3.1
-
μC
DC Link Capacitance
3300
μF
相關(guān)PDF資料
PDF描述
PP225D060 POW-R-PAK 200A / 1200V 3 phase IGBT Assembly
PP400B060 POW-R-PAK 400A / 600V H-Bridge IGBT Assembly
PP400T060 128 x 128 pixel format, LED or EL Backlight available
PP450D060 POW-R-PAK 450A / 600V Half Bridge IGBT Assembly
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