參數資料
型號： PP1200D060
廠商： Powerex Power Semiconductors
英文描述： POW-R-PAK 1200A / 600V Half Bridge IGBT Assembly
中文描述： 的POW - r -巴基斯坦1200A / 600V的IGBT的半橋大會
文件頁數： 2/6頁
文件大?。?/td> 365K
代理商： PP1200D060
TENTATIVE
PP1200D060
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
POW-R-PAK
TM
1200A / 600V
Half Bridge IGBT Assembly
Absolute Maximum Ratings, T
j
= 25°C unless otherwise specified
General
PP1200D060(-)
- 2 -
Symbol
Units
IGBT Junction Temperature
T
j
-40 to +150
°C
Storage Temperature
T
stg
-40 to +125
°C
Operating Temperature
T
op
-25 to +85
°C
Voltage Applied to DC terminals
V
CC
400
Volts
Isolation Voltage, AC 1 minute, 60Hz sinusoidal
V
iso
2500
Volts
IGBT Inverter
Collector Current (T
C
= 25°C)
I
C
1200
Amperes
Peak Collector Current (T
j
< 150°C)
I
CM
2400
Amperes
Emitter Current
I
E
1200
Amperes
Peak Emitter Current
I
EM
2400
Amperes
Maximum Collector Dissipation (T
j
< 150°C)
P
c
3120
Watts
Gate Drive Board
Unregulated +24V Power Supply
30
Volts
Regulated +15V Power Supply
18
Volts
PWM Signal Input Voltage
20
Volts
Fault Output Supply Voltage
30
Volts
Fault Output Current
IGBT Inverter Electrical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics
50
mA
Symbol
Test Conditions
Min
Typ
Max
Units
Collector Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
-
-
1
mA
I
C
= 1200A, T
j
= 25°C
-
1.6
2.2
Volts
Collector – Emitter Saturation Voltage
V
CE(sat)
I
C
= 1200A, T
j
= 125°C
-
1.6
-
Volts
Emitter – Collector Voltage
V
EC
I
E
= 1200A
-
-
2.6
Volts
t
d(on)
-
-
400
ns
t
r
-
-
200
ns
t
d(off)
-
-
700
ns
Inductive Load Switching Times
t
f
-
-
250
ns
Diode Reverse Recovery Time
t
rr
-
-
200
ns
Diode Reverse Recovery Charge
Q
rr
V
CC
= 300V
I
C
= 1200A
V
GE
= 15V
R
G
= 2.1
-
7.7
-
μC
DC Link Capacitance
27000
μF
相關PDF資料
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