- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄368084 > PNZ123S(PN123S) PNZ123S (PN123S) - Silicon NPN Phototransistor PDF資料下載
參數(shù)資料
| 型號(hào)： | PNZ123S(PN123S) |
| 英文描述： | PNZ123S (PN123S) - Silicon NPN Phototransistor |
| 中文描述： | PNZ123S（PN123S） -硅npn型光電晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 355K |
| 代理商： | PNZ123S(PN123S) |
1
PNZ120S
(PN120S)
Silicon NPN Phototransistor
For optical control systems
Can be combined with LN62S to form an optical controller
Features
High sensitivity
Wide directional sensitivity for easy use
Fast response : t
r
, t
f
= 3
μ
s (typ.)
Small size ( 3) ceramic package
Phototransistors
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Ratings
30
5
20
50
–25 to +85
–30 to +100
Unit
V
V
mA
mW
C
C
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
I
CEO
I
CE(L)1
I
CE(L)2
λ
P
θ
t
r
, t
f*2
V
CE(sat)
Conditions
min
typ
5
max
500
Unit
nA
μ
A
mA
nm
deg.
μ
s
V
Dark current
V
CE
= 10V
V
CE
= 10V, L = 2 lx
*1
V
CE
= 10V, L = 500 lx
*1
V
CE
= 10V
Measured from the optical axis to the half power point
V
CC
= 10V, I
CE(L)
= 5mA, R
L
= 100
I
CE(L)
= 1mA, L = 1000 lx
*1
Collector photo current
3
*3
*3
Peak sensitivity wavelength
Acceptance half angle
Response time
Collector saturation voltage
800
50
3
0.2
0.5
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
3.0
±
0.2
0.45
±
0.05
0.3
±
0.05
0.9
±
0.15
4
±
0
2
±
0
1
1
2
Unit : mm
1: Emitter
2: Collector
(Input pulse)
(Output pulse)
50
R
L
t
d
: Delay time
t
r
: Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
t
f
: Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
V
CC
Sig.OUT
10%
90%
Sig.IN
t
d
t
r
t
f
*3
I
CE(L)
Classifications
Class
QL
RL
SL
I
CE(L)1
(
μ
A)
I
CE(L) 2
(mA)
3 to 16
10 to 30
>24
5 typ.
6 typ.
8 typ.
Note) The part number in the parenthesis shows conventional part number.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PN120SQL | PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 20M | DOME-3.0 |
| PN120SRL | PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 20M | DOME-3.0 |
| PN120SSL | PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 20M | DOME-3.0 |
| PNZ121SQ | PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 10M | DOME-3.0 |
| PNZ121SR | PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 10M | DOME-3.0 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PNZ126S | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon NPN Phototransistor |
| PNZ1270 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:Silicon NPN Phototransistor |
| PNZ12700S | 功能描述:NPN PHOTO TRANSISTOR RoHS:是 類(lèi)別:傳感器，轉(zhuǎn)換器 >> 光學(xué) - 光電檢測(cè)器 - 光電晶體管 系列:* 標(biāo)準(zhǔn)包裝:1,200 系列:- 電壓 - 集電極發(fā)射極擊穿（最大）:30V 電流 - 集電極 (Ic)（最大）:1mA 電流 - 暗 (Id)（最大）:100nA 波長(zhǎng):880nm 視角:24° 功率 - 最大:100mW 安裝類(lèi)型:通孔 方向:頂視圖 封裝/外殼:徑向 |
| PNZ147 | 功能描述:NPN PHOTOTRANS 800NM DOUBLE END RoHS:是 類(lèi)別:傳感器，轉(zhuǎn)換器 >> 光學(xué) - 光電檢測(cè)器 - 光電晶體管 系列:* 標(biāo)準(zhǔn)包裝:1,200 系列:- 電壓 - 集電極發(fā)射極擊穿（最大）:30V 電流 - 集電極 (Ic)（最大）:1mA 電流 - 暗 (Id)（最大）:100nA 波長(zhǎng):880nm 視角:24° 功率 - 最大:100mW 安裝類(lèi)型:通孔 方向:頂視圖 封裝/外殼:徑向 |
| PNZ147(PN147) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:光デバイス － 受光素子 － フォトトランジスタ |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。