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參數(shù)資料
| 型號： | PNC4271F |
| 英文描述： | Opto-Electronic Device - Photo Detectors - Photo ICs |
| 中文描述： | 光電子器件-攝影探測器-照片集成電路 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 73K |
| 代理商： | PNC4271F |
PNC4271F
2
SHE00047
B
ED
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Supply voltage
V
CC
+
6
V
Power dissipation
P
D
T
opr
T
stg
115
mW
Operating ambient temperature
20 to
+
80
30 to
+
85
°
C
°
C
Storage temperature
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Current of all circuits
Output voltage
*1, 2, 3, 6
I
CC
1.5
3.0
mA
V
O
P
1
=
10
μ
W, A to D element
P
1
=
10
μ
W, E to F element
A to F element
240
300
360
mV
520
660
800
Output offset voltage
*1
V
OFF
V
OFF
20
20
20
20
15
0
+
20
+
20
+
20
+
20
+
15
mV
Output offset voltage difference
(A
+
B)
(C
+
D) element
(A
+
D)
(B
+
C) element
(A
+
C)
(B
+
D) element
E
F element
P
l
=
100
μ
W
0
mV
0
0
0
Maximum output voltage
*2, 5, 6
Output noise voltage
*6
Frequency characteristics
*2, 4, 6
V
OM
V
ON
3.7
4.1
V
0.2
1.0
mV[rms]
f
C
A to D element
6
8
MHz
E to F element
0.5
1.5
Peak sensitivity wavelength
*6
Response time
*2
λ
P
900
nm
t
r
, t
f
10% to 90% of output wave
90
ns
I
Electro-Optical Characteristics
V
CC
=
5 V, R
L
=
83 k
, T
a
=
25
°
C
±
3
°
C
Note)*1: Based on reference supply voltage range.
*2: Semiconductor laser light source (
λ
=
780 nm)
*3: Not include the output offset voltage.
*4: Frequency when starting from 100 kHz and the output voltage decreased by 3 dB.
*5: Based on GND.
*6: Designed specification.
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