參數(shù)資料
型號(hào): PMLL4150
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: High-speed diodes
中文描述: 0.3 A, 75 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS, SMD, 2 PIN
文件頁(yè)數(shù): 5/9頁(yè)
文件大?。?/td> 37K
代理商: PMLL4150
1996 Sep 18
5
Philips Semiconductors
Product specification
High-speed diodes
PMLL4150; PMLL4151; PMLL4153
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an FR4 printed-circuit board.
t
rr
reverse recovery time
PMLL4150
when switched from I
F
= 10 mA to
I
R
= 1 mA; R
L
= 100
; measured at
I
R
= 0.1 mA; see Fig.7
when switched from I
F
= 10 mA to
200 mA to I
R
= 10 mA to 200 mA;
R
L
= 100
; measured at I
R
= 0.1
×
I
F
;
see Fig.7
when switched from I
F
= 200 mA to
400 mA to I
R
= 200 mA to 400 mA;
R
L
= 100
; measured at I
R
= 0.1
×
I
F
;
see Fig.7
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
; measured at
I
R
= 1 mA; see Fig.7
when switched from I
F
= 10 mA to
I
R
= 60 mA; R
L
= 100
; measured at
I
R
= 1 mA; see Fig.7
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
; measured at
I
R
= 1 mA; see Fig.7
when switched from I
F
= 10 mA to
I
R
= 60 mA; R
L
= 100
; measured at
I
R
= 1 mA; see Fig.7
when switched to I
F
= 200 mA; t
r
= 0.4 ns;
measured at V
F
= 1 V; see Fig.8
6
ns
4
ns
6
ns
t
rr
reverse recovery time
PMLL4151
4
ns
2
ns
t
rr
reverse recovery time
PMLL4153
4
ns
2
ns
t
fr
forward recovery time
10
ns
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
300
350
K/W
K/W
note 1
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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