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參數(shù)資料
| 型號(hào)： | PMEM4010ND |
| 英文描述： | NPN transistor/Schottky diode module |
| 中文描述： | NPN晶體管/肖特基二極管模塊 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | PMEM4010ND |
2003 Jul 04
3
Philips Semiconductors
Product specification
NPN transistor/Schottky diode module
PMEM4010ND
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1.
2.
Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
ForSchottkybarrierdiodesthermalrun-awayhastobeconsidered,asinsomeapplicationsthereversepowerlosses
P
R
are significant part of the total power losses. Nomograms for determination of the reverse power losses P
R
and
I
F
(AV) rating will be available on request.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
NPN transistor
V
CBO
V
CEO
V
I
C
I
CM
I
BM
T
j
Schottky barrier diode
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
junction temperature
open emitter
open base
open collector
40
40
5
1
2
1
150
V
V
V
A
A
A
°
C
V
R
I
F
I
FSM
continuous reverse voltage
continuous forward current
non repetitive peak forward current
20
1
5
V
A
A
t = 8.3 ms half sinewave;
JEDEC method
T
j
Combined device
junction temperature
125
°
C
P
tot
T
stg
T
amb
total power dissipation
storage temperature
operating ambient temperature
T
amb
≤
25
°
C; note 1
65
65
600
+150
+125
mW
°
C
°
C
note 2
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air; note 1
208
K/W
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| PMEM4010ND T/R | 功能描述:兩極晶體管 - BJT DIODE/TRANS MODULE TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PMEM4010ND,115 | 功能描述:兩極晶體管 - BJT DIODE/TRANS MODULE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PMEM4010PD | 制造商:NXP Semiconductors 功能描述:DIODE SCHOTTKY SOT-457 |
| PMEM4010PD T/R | 功能描述:兩極晶體管 - BJT DIODE/TRANS MODULE TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PMEM4010PD,115 | 功能描述:兩極晶體管 - BJT DIODE/TRANS MODULE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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