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參數(shù)資料
| 型號： | PMBF5485 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-channel field-effect transistors |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 96K |
| 代理商： | PMBF5485 |
April 1995
3
Philips Semiconductors
Product specification
N-channel field-effect transistors
PMBF5484; PMBF5485;
PMBF5486
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL RESISTANCE
Note
1.
Device mounted on an FR4 printed-circuit board.
STATIC CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
V
GSO
V
GDO
I
G
P
tot
T
stg
T
j
drain-source voltage
gate-source voltage
gate-drain voltage
DC forward gate current
total power dissipation
storage temperature
junction temperature
65
25
25
25
10
250
+
150
150
V
V
V
mA
mW
°
C
°
C
up to T
amb
= 25
°
C (note 1)
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-a
from junction to ambient (note 1)
500 K/W
SYMBOL
PARAMETER
CONDITIONS
V
DS
= 0; I
G
=
1
μ
A
V
DS
= 15 V; V
GS
= 0
MIN.
MAX.
UNIT
V
(BR)GSS
I
DSS
gate-source breakdown voltage
drain current
PMBF5484
PMBF5485
PMBF5486
reverse gate leakage current
gate-source forward voltage
gate-source cut-off voltage
PMBF5484
PMBF5485
PMBF5486
common source transfer admittance
PMBF5484
PMBF5485
PMBF5486
common source output admittance
PMBF5484
PMBF5485
PMBF5486
25
V
1
4
8
5
10
20
1
1
mA
mA
mA
nA
V
I
GSS
V
GSS
V
GS(off)
V
DS
= 0; V
GS
=
15 V
V
DS
= 0; I
G
= 1 mA
V
DS
= 15 V; I
D
= 1 nA
0.3
0.5
2
3
4
6
V
V
V
Y
fs
V
DS
= 15 V; V
GS
= 0
3
3.5
4
6
7
8
mS
mS
mS
Y
os
V
DS
= 15 V; V
GS
= 0
50
60
75
μ
S
μ
S
μ
S
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| PMBFJ108,215 | 功能描述:JFET JFET N-CH 25V 6MA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
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