參數(shù)資料
型號: PMBF4416
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: N-channel field-effect transistor
中文描述: UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
封裝: PLASTIC, SOT-23, 3 PIN
文件頁數(shù): 3/9頁
文件大小: 95K
代理商: PMBF4416
April 1995
3
Philips Semiconductors
Product specification
N-channel field-effect transistor
PMBF4416; PMBF4416A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL RESISTANCE
Note
1.
Mounted on an FR4 printed-circuit board.
STATIC CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
PMBF4416
PMBF4416A
gate-source voltage
PMBF4416
PMBF4416A
gate-drain voltage
PMBF4416
PMBF4416A
DC forward gate current
total power dissipation
storage temperature
junction temperature
30
35
V
V
V
GSO
30
35
V
V
V
GDO
65
30
35
10
250
+150
150
V
V
mA
mW
°
C
°
C
I
G
P
tot
T
stg
T
j
up to T
amb
= 25
°
C (note 1)
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-a
from junction to ambient (note 1)
500 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
(BR)GSS
gate-source breakdown voltage
PMBF4416
PMBF4416A
reverse gate leakage current
drain current
gate-source forward voltage
gate-source cut-off voltage
PMBF4416
PMBF4416A
common source transfer admittance
common source output admittance
PMBF4416
PMBF4416A
V
DS
= 0; I
G
=
1
μ
A
30
35
5
1
15
1
V
V
nA
mA
V
I
GSS
I
DSS
V
GSS
V
GS(off)
V
DS
= 0; V
GS
=
15 V
V
DS
= 15 V; V
GS
= 0
V
DS
= 0; I
G
= 1 mA
V
DS
= 15 V; I
D
= 1 nA
2.5
4.5
6
6
7.5
V
V
mS
Y
fs
Y
os
V
DS
= 15 V; V
GS
= 0
V
DS
= 15 V; V
GS
= 0
50
50
μ
S
μ
S
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