參數(shù)資料
型號: PMBD2835
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: High-speed double diodes
中文描述: 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 4/8頁
文件大?。?/td> 43K
代理商: PMBD2835
1996 Sep 18
4
Philips Semiconductors
Product specification
High-speed double diodes
PMBD2835; PMBD2836
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
see Fig.5
V
R
= 30 V
V
R
= 30 V; T
j
= 150
°
C;
V
R
= 50 V
V
R
= 50 V; T
j
= 150
°
C
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA; see Fig.7
when switched from I
F
= 10 mA;
t
r
= 20 ns; see Fig.8
715
855
mV
mV
V
V
1
1.25
I
R
reverse current
PMBD2835
100
40
100
50
nA
μ
A
nA
μ
A
pF
ns
PMBD2836
C
d
t
rr
diode capacitance
reverse recovery time
2.5
4
V
fr
forward recovery voltage
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
360
500
K/W
K/W
note 1
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