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參數(shù)資料
| 型號(hào)： | PLB16012U |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-437A, 3 PIN |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | PLB16012U |
1997 Feb 18
3
Philips Semiconductors
Product specification
NPN microwave power transistor
PLB16012U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Up to 0.3 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
open emitter
open base
R
BE
= 0
open collector
65
45
15
40
3
0.9
15
+150
200
235
V
V
V
V
A
W
°
C
°
C
°
C
T
mb
= 75
°
C
t
≤
10 s; note 1
Fig.2
Maximum power dissipation derating as a
function of mounting base temperature.
P
tot max
= 15 W.
handbook, halfpage
Ptot
(W)
50
50
150
Tmb (
o
C)
250
15
5
0
10
MGA242
0
100
200
Fig.3 Load power as a function of source power.
V
CC
= 28 V; f = 1.6 GHz.
handbook, halfpage
0
10
5
0
0.5
PL
(W)
1.0
2.0
MGA241
1.5
PIN (W)
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