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參數(shù)資料
| 型號(hào)： | PLB16004U |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Microwave power transistor |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-437A, 3 PIN |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | PLB16004U |
1997 Feb 18
4
Philips Semiconductors
Product specification
Microwave power transistor
PLB16004U
THERMAL CHARACTERISTICS
Note
1.
See “Mounting recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C in a common-base test circuit as shown in Fig.3.
SYMBOL
PARAMETER
CONDITIONS
T
j
= 100
°
C
MAX.
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink note 1
11
0.3
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
μ
A
V
V
V
I
CES
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
h
FE
collector cut-off current
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
DC current gain
R
BE
= 0; V
CE
= 30 V
I
C
= 1 mA; I
E
= 0
I
C
= 1 mA; I
E
= 0
I
C
= 1 mA; I
E
= 0
I
C
= 300 mA; V
CE
= 5 V
40
40
3
15
200
100
MODE OF
OPERATION
f
(GHz)
V
CC
(V)
P
L
(W)
G
p
(dB)
η
C
(%)
Z
i
; Z
L
(
)
Class C (CW)
1.6
28
typ. 5
typ. 10
typ. 50
see Figs 5 and 6
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