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參數(shù)資料
| 型號(hào)： | PIP3118-B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | Logic level TOPFET |
| 中文描述： | BUF OR INV BASED PRPHL DRVR, PSSO2 |
| 封裝： | PLASTIC, SOT-404, D2PAK-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 30K |
| 代理商： | PIP3118-B |
Philips Semiconductors
Product specification
Logic level TOPFET
PIP3118-B
OUTPUT CHARACTERISTICS
Limits are for -40C
≤
T
mb
≤
150C; typicals are for T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Off-state
V
IS
= 0 V
I
D
= 10 mA
I
DM
= 4 A; t
p
≤
300
μ
s;
δ
≤
0.01
V
DS
= 40 V
V
(CL)DSS
Drain-source clamping voltage
50
-
-
V
50
60
70
V
I
DSS
Drain source leakage current
-
-
-
100
10
μ
A
μ
A
T
mb
= 25C
0.1
On-state
V
IS
≥
4.4 V; t
p
≤
300
μ
s;
δ
≤
0.01
I
DM
= 10 A
R
DS(ON)
Drain-source resistance
-
-
-
52
28
m
m
T
mb
= 25C
22
OVERLOAD CHARACTERISTICS
V
IS
= 5 V; T
mb
= 25C unless otherwise specified.
SYMBOL
PARAMETER
Short circuit load
I
D
Drain current limiting
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 13 V
4.4 V
≤
V
IS
≤
5.5 V;
-40C
≤
T
mb
≤
150C
28.5
21
43
-
57
65
A
A
Overload protection
Overload power threshold
Characteristic time
P
D(TO)
T
DSC
device trips if P
D
> P
D(TO)
which determines trip time
1
75
200
185
380
250
600
W
μ
s
Overtemperature protection
Threshold junction
temperature
2
T
j(TO)
150
170
-
C
1
Trip time t
d sc
varies with overload dissipation P
D
according to the formula t
d sc
≈
T
DSC
/ ln[ P
D
/ P
D(TO)
].
2
This is independent of the dV/dt of input voltage V
IS
.
May 2001
3
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| PIP3118-B | 制造商:NXP Semiconductors 功能描述:MOSFET N INTELLIGENT |
| PIP3119-P | 制造商:NXP Semiconductors 功能描述:MOSFET N INTELLIGENT |
| PIP3119-P,127 | 功能描述:MOSFET RAIL TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PIP3119-P | 制造商:NXP Semiconductors 功能描述:MOSFET N INTELLIGENT |
| PIP3201-A | 制造商:NXP Semiconductors 功能描述:MOSFET N INTELLIGENT |
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