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- 您現(xiàn)在的位置:買(mǎi)賣(mài)IC網(wǎng) > PDF目錄3878 > PIC18F23K20-I/SP (Microchip Technology)IC PIC MCU FLASH 4KX16 28-DIP PDF資料下載
參數(shù)資料
型號(hào):
PIC18F23K20-I/SP
廠商:
Microchip Technology
文件頁(yè)數(shù):
5/42頁(yè)
文件大小:
0K
描述:
IC PIC MCU FLASH 4KX16 28-DIP
產(chǎn)品培訓(xùn)模塊:
XLP Deep Sleep Mode
8-bit PIC® Microcontroller Portfolio
標(biāo)準(zhǔn)包裝:
15
系列:
PIC® XLP™ 18F
核心處理器:
PIC
芯體尺寸:
8-位
速度:
64MHz
連通性:
I²C,SPI,UART/USART
外圍設(shè)備:
欠壓檢測(cè)/復(fù)位,HLVD,POR,PWM,WDT
輸入/輸出數(shù):
24
程序存儲(chǔ)器容量:
8KB(4K x 16)
程序存儲(chǔ)器類(lèi)型:
閃存
EEPROM 大?。?/td>
256 x 8
RAM 容量:
512 x 8
電壓 - 電源 (Vcc/Vdd):
1.8 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器:
A/D 11x10b
振蕩器型:
內(nèi)部
工作溫度:
-40°C ~ 85°C
封裝/外殼:
28-DIP(0.300",7.62mm)
包裝:
管件
產(chǎn)品目錄頁(yè)面:
655 (CN2011-ZH PDF)
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2009 Microchip Technology Inc.Advance InformationDS41297F-page 13PIC18F2XK20/4XK203.0DEVICE PROGRAMMINGProgramming includes the ability to erase or write thevarious memory regions within the device.In all cases, except high-voltage ICSP Bulk Erase, theEECON1 register must be configured in order tooperate on a particular memory region.When using the EECON1 register to act on codememory, the EEPGD bit must be set (EECON1<7> = 1)and the CFGS bit must be cleared (EECON1<6> = 0).The WREN bit must be set (EECON1<2> = 1) toenable writes of any sort (e.g., erases) and this must bedone prior to initiating a write sequence. The FREE bitmust be set (EECON1<4> = 1) in order to erase theprogram space being pointed to by the Table Pointer.The erase or write sequence is initiated by setting theWR bit (EECON1<1> = 1). It is strongly recommendedthat the WREN bit only be set immediately prior to aprogram or erase.3.1ICSP Erase3.1.1HIGH-VOLTAGE ICSP BULK ERASEErasing code or data EEPROM is accomplished byconfiguring two Bulk Erase Control registers located at3C0004h and 3C0005h. Code memory may be erasedportions at a time, or the user may erase the entiredevice in one action. Bulk Erase operations will alsoclear any code-protect settings associated with thememory block erased. Erase options are detailed inIfdataEEPROMiscode-protected(CPD = 0), the user must request an erase of dataEEPROM (e.g., 0084h as shown in Table 3-1).TABLE 3-1:BULK ERASE OPTIONSThe actual Bulk Erase function is a self-timedoperation. Once the erase has started (falling edge ofthe 4th PGC after the NOP command), serial executionwill cease until the erase completes (parameter P11).During this time, PGC may continue to toggle but PGDmust be held low.The code sequence to erase the entire device is shownin Table 3-2 and the flowchart is shown in Figure 3-1.TABLE 3-2:BULK ERASE COMMANDSEQUENCEFIGURE 3-1:BULK ERASE FLOWDescriptionData(3C0005h:3C0004h)Chip Erase0F8FhErase User ID0088hErase Data EEPROM0084hErase Boot Block0081hErase Config Bits0082hErase Code EEPROM Block 00180hErase Code EEPROM Block 10280hErase Code EEPROM Block 20480hErase Code EEPROM Block 30880hNote:A Bulk Erase is the only way to reprogramcode-protect bits from an “on” state to an“off” state.4-BitCommandDataPayloadCore Instruction00000E 3CMOVLW 3Ch00006E F8MOVWF TBLPTRU00000E 00MOVLW 00h00006E F7MOVWF TBLPTRH00000E 05MOVLW 05h00006E F6MOVWF TBLPTRL11000F 0FWrite 0Fh to 3C0005h00000E 3CMOVLW 3Ch00006E F8MOVWF TBLPTRU00000E 00MOVLW 00h00006E F7MOVWF TBLPTRH00000E 04MOVLW 04h00006E F6MOVWF TBLPTRL11008F 8FWrite 8F8Fh TO 3C0004hto erase entire device.000000 00NOP000000 00Hold PGD low until erasecompletes.StartDoneWrite 8F8Fh to3C0004h to EraseEntire DeviceWrite 0F0FhDelay P11 + P10Timeto 3C0005h
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