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參數(shù)資料
| 型號： | NUP2202W1 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Low Capacitance SC-88 Diode-TVS Array for HIGH Speed Data Lines Protection |
| 中文描述： | 低電容資深- 88二極管二極管的高速數(shù)據(jù)線路保護陣列 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 76K |
| 代理商： | NUP2202W1 |
NUP2202W1
http://onsemi.com
4
V
CC
D1
D2
Data Line
I
ESDpos
I
ESDneg
VF + V
CC
VF
I
ESDpos
I
ESDneg
Power
Supply
Protected
Device
Looking at the figure above, it can be seen that when a
positive ESD condition occurs, diode D1 will be forward
biased while diode D2 will be forward biased when a
negative ESD condition occurs. For slower transient
conditions, this system may be approximated as follows:
For positive pulse conditions:
Vc = Vcc + Vf
D1
For negative pulse conditions:
Vc = Vf
D2
ESD events can have rise times on the order of some
number of nanoseconds. Under these conditions, the effect
of parasitic inductance must be considered. A pictorial
representation of this is shown below.
V
CC
D1
D2
Data Line
I
ESDpos
I
ESDneg
V
C
= V
CC
+ Vf + (L diESD/dt)
I
ESDneg
I
ESDpos
Power
Supply
Protected
Device
V
C
= Vf (L diESD/dt)
An approximation of the clamping voltage for these fast
transients would be:
For positive pulse conditions:
Vc = Vcc + Vf + (L di
ESD
/dt)
For negative pulse conditions:
Vc = Vf – (L di
ESD
/dt)
As shown in the formulas, the clamping voltage (Vc) not
only depends on the Vf of the steering diodes but also on the
L di
ESD
/dt factor. A relatively small trace inductance can
result in hundreds of volts appearing on the supply rail. This
endangers both the power supply and anything attached to
that rail. This highlights the importance of good board
layout. Taking care to minimize the effects of parasitic
inductance will provide significant benefits in transient
immunity.
Even with good board layout, some disadvantages are still
present when discrete diodes are used to suppress ESD
events across datalines and the supply rail. Discrete diodes
with good transient power capability will have larger die and
therefore higher capacitance. This capacitance becomes
problematic as transmission frequencies increase. Reducing
capacitance generally requires reducing die size. These
small die will have higher forward voltage characteristics at
typical ESD transient current levels. This voltage combined
with the smaller die can result in device failure.
The ON Semiconductor NUP2202W1 was developed to
overcome the disadvantages encountered when using
discrete diodes for ESD protection. This device integrates a
TVS diode within a network of steering diodes.
D1
D2
D3
D4
0
NUP2202W1 Equivalent Circuit
During an ESD condition, the ESD current will be driven
to ground through the TVS diode as shown below.
V
CC
D1
D2
Data Line
I
ESDpos
Power
Supply
Protected
Device
The resulting clamping voltage on the protected IC will
be:
Vc = V
F
+ V
TVS
.
The clamping voltage of the TVS diode is provided in
Figure 4 and depends on the magnitude of the ESD current.
The steering diodes are fast switching devices with unique
forward voltage and low capacitance characteristics.
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相關代理商/技術參數(shù) |
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| NUP2202W1T2G | 功能描述:TVS二極管陣列 LOW CAP DIODE TVS ARRAY RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| NUP2202W1T2G-CUT TAPE | 制造商:ON 功能描述:NUP2202W Series 20 V 5 pF Uni-Directional Transient Voltage Suppressor - SC-88 |
| NUP2301 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low cap. diode array for 2 Line High Speed USB protection devic |
| NUP2301MW6T1 | 功能描述:整流器 Low Cap. for ESD RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| NUP2301MW6T1/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Low Capacitance Diode Array for ESD Protection in Two Data Lines |
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